Zobrazeno 1 - 10
of 70
pro vyhledávání: '"T. P. Humphreys"'
Autor:
C. R. Clauer, H. Kim, K. Deshpande, Z. Xu, D. Weimer, S. Musko, G. Crowley, C. Fish, R. Nealy, T. E. Humphreys, J. A. Bhatti, A. J. Ridley
Publikováno v:
Geoscientific Instrumentation, Methods and Data Systems, Vol 3, Iss 2, Pp 211-227 (2014)
We present the development considerations and design for ground-based instrumentation that is being deployed on the East Antarctic Plateau along a 40° magnetic meridian chain to investigate interhemispheric magnetically conjugate geomagnetic couplin
Externí odkaz:
https://doaj.org/article/eb902bf9a4a04745911f3f6e4ad56f79
Autor:
Robert J. Markunas, D. P. Malta, G. C. Hudson, R. E. Thomas, T. P. Humphreys, R. A. Rudder, J. B. Posthill
Publikováno v:
Journal of Applied Physics. 79:2722-2727
By combining a low temperature (600 °C) chemical vapor deposition process for homoepitaxial diamond and conventional ion implantation, we have made and lifted off a synthetic diamond single crystal plate. Before growth, a type Ia C(100) crystal was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea3b70d394437134211630c48dce2cbe
https://doi.org/10.1063/1.361144
https://doi.org/10.1063/1.361144
Autor:
Robert Hendry, G. C. Hudson, R. A. Rudder, J. B. Posthill, D. P. Malta, R.J. Markunas, R. E. Thomas, T. P. Humphreys
Publikováno v:
Thin Solid Films. 271:39-49
A multi-step process to fabricate a diamond single crystal that is larger than the original, natural, commercially-obtained crystals is described. Starting with 3.0 mm × 3.0 mm × 0.25 mm, natural, type Ia C(100) crystals that have had their edges o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c04019cac0ee4f2ffa797ea102400181
https://doi.org/10.1016/0040-6090(95)06878-3
https://doi.org/10.1016/0040-6090(95)06878-3
Publikováno v:
Journal of Applied Physics. 76:2208-2212
Low resistance ohmic contacts have been formed on diamond films using bilayer structures of TiC/Au or TaSi2/Au. The initial films of TiC or TaSi2 were sputter‐deposited from preformed targets. The overlying Au film was deposited by e‐beam evapora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03785fe71f397c4e95022ef0c912559
https://doi.org/10.1063/1.358510
https://doi.org/10.1063/1.358510
Autor:
Robert J. Nemanich, P.K. Baumann, Nalin R. Parikh, Lisa M. Porter, K. Ishibashi, T. P. Humphreys, Robert F. Davis
Publikováno v:
Diamond and Related Materials. 3:883-886
In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b38173d3420c72e36e37daa6a6c1252
https://doi.org/10.1016/0925-9635(94)90292-5
https://doi.org/10.1016/0925-9635(94)90292-5
Publikováno v:
Physica B: Condensed Matter. 185:528-538
Results related to two different interface aspects involving diamond are described: (1) the initial states of CVD diamond film growth, and (2) the negative electron affinity and formation of metal-diamond interfaces. The surface and interface propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4c13224817e543d097bdf23ffa60507
https://doi.org/10.1016/0921-4526(93)90290-m
https://doi.org/10.1016/0921-4526(93)90290-m
Autor:
C Pettenkofer, M. J. Mantini, J. B. Posthill, R. E. Thomas, G. C. Hudson, T. P. Humphreys, R.J. Markunas, R. A. Rudder, D. P. Malta
Publikováno v:
Applied Physics Letters. 70:1257-1259
The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A hydrogen induced low-energy emission peak, whose intensity was found to be a linear function of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4cb96603a73c8982eb4f84bd4e412c2
https://doi.org/10.1063/1.118545
https://doi.org/10.1063/1.118545
Autor:
G. G. Fountain, R. E. Thomas, M. J. Mantini, Robert J. Markunas, R. A. Rudder, G. C. Hudson, J. B. Posthill, D. P. Malta, T. P. Humphreys
Publikováno v:
Applied Physics Letters. 64:1929-1931
Polished nominal (100) surfaces of four types of diamonds were exposed to atomic hydrogen by hot filament cracking of H2 gas or by immersion in a H2 plasma discharge. Both types IIa and IIb (100) diamond surfaces exhibited the following characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a933699739c9cfffd85aa87dc8cdeac
https://doi.org/10.1063/1.111745
https://doi.org/10.1063/1.111745
Publikováno v:
Applied Physics Letters. 60:886-888
Device quality GaAs‐AlGaAs thin films have been obtained on Si substrates, using a novel approach called eutectic‐metal‐bonding (EMB). This involves the lattice‐matched growth of GaAs‐AlGaAs thin films on Ge substrates, followed by bonding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4facb2f1c7c9d33a1cd4524c4c61dbb
https://doi.org/10.1063/1.106494
https://doi.org/10.1063/1.106494
Publikováno v:
Applied Physics Letters. 60:844-846
Heteroepitaxial Ge on Si has been grown using molecular beam epitaxy at a Si substrate temperature of 900 °C. Electron microscopy results reveal a highly faceted interface, indicating localized Ge melting and subsequent local alloying with Si. Furth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d833db9fc995f7cf4bdd0c75c03aa4c
https://doi.org/10.1063/1.106532
https://doi.org/10.1063/1.106532