Zobrazeno 1 - 10
of 401
pro vyhledávání: '"T. P. Humphreys"'
Autor:
Leib, E. F.
Publikováno v:
Journal of Fluids Engineering; May 1942, Vol. 64 Issue: 4 p283-285, 3p
Autor:
C. R. Clauer, H. Kim, K. Deshpande, Z. Xu, D. Weimer, S. Musko, G. Crowley, C. Fish, R. Nealy, T. E. Humphreys, J. A. Bhatti, A. J. Ridley
Publikováno v:
Geoscientific Instrumentation, Methods and Data Systems, Vol 3, Iss 2, Pp 211-227 (2014)
We present the development considerations and design for ground-based instrumentation that is being deployed on the East Antarctic Plateau along a 40° magnetic meridian chain to investigate interhemispheric magnetically conjugate geomagnetic couplin
Externí odkaz:
https://doaj.org/article/eb902bf9a4a04745911f3f6e4ad56f79
Autor:
Rowand, W. H.
Publikováno v:
Journal of Fluids Engineering; May 1942, Vol. 64 Issue: 4 p285-286, 2p
Autor:
Artsay, N.
Publikováno v:
Journal of Fluids Engineering; May 1942, Vol. 64 Issue: 4 p282-283, 2p
Autor:
Robert J. Markunas, D. P. Malta, G. C. Hudson, R. E. Thomas, T. P. Humphreys, R. A. Rudder, J. B. Posthill
Publikováno v:
Journal of Applied Physics. 79:2722-2727
By combining a low temperature (600 °C) chemical vapor deposition process for homoepitaxial diamond and conventional ion implantation, we have made and lifted off a synthetic diamond single crystal plate. Before growth, a type Ia C(100) crystal was
Autor:
Robert Hendry, G. C. Hudson, R. A. Rudder, J. B. Posthill, D. P. Malta, R.J. Markunas, R. E. Thomas, T. P. Humphreys
Publikováno v:
Thin Solid Films. 271:39-49
A multi-step process to fabricate a diamond single crystal that is larger than the original, natural, commercially-obtained crystals is described. Starting with 3.0 mm × 3.0 mm × 0.25 mm, natural, type Ia C(100) crystals that have had their edges o
Publikováno v:
Journal of Applied Physics. 76:2208-2212
Low resistance ohmic contacts have been formed on diamond films using bilayer structures of TiC/Au or TaSi2/Au. The initial films of TiC or TaSi2 were sputter‐deposited from preformed targets. The overlying Au film was deposited by e‐beam evapora
Autor:
Robert J. Nemanich, P.K. Baumann, Nalin R. Parikh, Lisa M. Porter, K. Ishibashi, T. P. Humphreys, Robert F. Davis
Publikováno v:
Diamond and Related Materials. 3:883-886
In this study Cu films of 30 nm and 200 nm thickness have been grown on natural type IIb semiconducting diamond C(001) substrates by electron-beam evaporation at 500 °C in UHV. As evidenced by Rutherford backscattering/channeling techniques and in s
Publikováno v:
Physica B: Condensed Matter. 185:528-538
Results related to two different interface aspects involving diamond are described: (1) the initial states of CVD diamond film growth, and (2) the negative electron affinity and formation of metal-diamond interfaces. The surface and interface propert
Autor:
C Pettenkofer, M. J. Mantini, J. B. Posthill, R. E. Thomas, G. C. Hudson, T. P. Humphreys, R.J. Markunas, R. A. Rudder, D. P. Malta
Publikováno v:
Applied Physics Letters. 70:1257-1259
The role of chemisorbed hydrogen in the enhancement of low-energy electron emission from natural type IIb C(001) diamond surfaces has been investigated. A hydrogen induced low-energy emission peak, whose intensity was found to be a linear function of