Zobrazeno 1 - 10
of 60
pro vyhledávání: '"T. P. Chin"'
Autor:
T. L. Choon, L. C. Ho, U. Ujang, T. A. Chin, N. S. Azri, K. S. Looi, M. L. Toh, W. V. Tan, K. Shanmugapathy, J. A. Geh
Publikováno v:
The International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences, Vol XLVI-4-W3-2021, Pp 79-86 (2022)
Cadastral fabric is perceived as a feasible solution to improve the speed, efficiency and quality of the cadastral measurement data to implement Positional Accuracy Improvement (PAI) and to support Coordinated Cadastral System (CCS) and Dynamic Coord
Externí odkaz:
https://doaj.org/article/3e4da22690a14de48ac6c3bbcbaf712a
Autor:
Caspar M. van Leeuwen, Arlene L. Oei, Kenneth W. T. K. Chin, Johannes Crezee, Arjan Bel, Anneke M. Westermann, Marrije R. Buist, Nicolaas A. P. Franken, Lukas J. A. Stalpers, H. Petra Kok
Publikováno v:
Radiation Oncology, Vol 12, Iss 1, Pp 1-8 (2017)
Abstract Background Combined radiotherapy and hyperthermia is a well-established alternative to chemoradiotherapy for advanced stage cervical cancer patients with a contraindication for chemotherapy. Pre-clinical evidence suggests that the radiosensi
Externí odkaz:
https://doaj.org/article/2bc8fa3a6c164e52a1053fc6770d7edc
Publikováno v:
Earth System Science Data, Vol 8, Iss 1, Pp 165-176 (2016)
This paper describes a blended sea-surface temperature (SST) data set that is part of the National Oceanic and Atmospheric Administration (NOAA) Climate Data Record (CDR) program product suite. Using optimum interpolation (OI), in situ and satellite
Externí odkaz:
https://doaj.org/article/b4f170b2813e48d582995bf4f704bea2
Akademický článek
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Autor:
X. Zhang, T.R. Block, T. P. Chin, Dwight C. Streit, Mike Wojtowicz, A. C. Han, A. Cavus, A.K. Oki
Publikováno v:
Journal of Applied Physics. 86:6160-6163
Photoreflectance (PR) and photoluminescence (PL) techniques were used to characterize the AlGaAs/GaAs heterojunction bipolar transistor (HBT) wafers grown by molecular beam epitaxy (MBE). The line shape of the PR GaAs signal is closely related to the
Publikováno v:
Journal of Applied Physics. 82:4331-4337
The momentum conserving indirect excitonic transitions, from the Γ15 valence band maximum to the conduction band minima close to the X1 point in the Brillouin zone have been measured for GaP in piezo-modulated transmission. At 6 K, excitonic signatu
Publikováno v:
Semiconductor Science and Technology. 11:1575-1581
Growth and lateral charge transport properties of thin (d = 20 - 30 A) Bi films are investigated with scanning tunnelling microscopy. Bismuth is deposited at T = 140 K onto the cleaved (110) surface of an InP-based heterostructure. Growth at low temp
Publikováno v:
Journal of Electronic Materials. 23:403-407
The electrical properties of high resistivity GaInP layers produced by He+ ion implantation have been studied. Thick high-resistivity layers (ρ > 107 Ω-cm) were obtained using multi-energy implants (80 keV, 120 keV, and 150 keV). Current-voltage (I
Publikováno v:
Journal of Crystal Growth. 136:191-194
Highly p-type carbon-doped GaAs and In 0.53 Ga 047 As grown by gas-source molecular beam epitaxy were obtained by using carbon tetrabromide as the carbon source. In the low 10 19 cm -3 range almost all carbon atoms are electrically active in GaAs, an
Publikováno v:
Electronics Letters. 28:68-71
The effective Schottky barrier height on n-type InP is increased by a thin heavily-doped p-type surface layer grown by gas-source molecular beam epitaxy. The relationships between the barrier height increment and the doping level and thickness of the