Zobrazeno 1 - 10
of 75
pro vyhledávání: '"T. O. Sedgwick"'
Autor:
H. G. Robinson, J. A. Slinkman, J. K. Listebarger, Mark E. Law, Kevin S. Jones, T. O. Sedgwick, D. D. Sieloff
Publikováno v:
Journal of Applied Physics. 78:2298-2302
A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636ed9d763f0cee7484927b24b7439e1
https://doi.org/10.1063/1.360147
https://doi.org/10.1063/1.360147
SiGe/Si quantum wells with abrupt interfaces grown by atmospheric pressure chemical vapor deposition
Publikováno v:
Vacuum. 46:947-950
Atmospheric pressure chemical vapor deposition has been used to grow SiGe/Si quantum well structures on (001) oriented Si substrates. SiCl 2 H 2 and GeH 4 were used as reactive gases in a H 2 atmosphere. The hydrogen ambient is shown to greatly facil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3033e07d4aefcde77b2c2ce14a08fe6b
https://doi.org/10.1016/0042-207x(95)00079-8
https://doi.org/10.1016/0042-207x(95)00079-8
Autor:
Detlev Grützmacher, T. O. Sedgwick
Publikováno v:
Scopus-Elsevier
Atmospheric pressure chemical vapor deposition (APCVD) has been used to grow an epitaxial SiGe-base for a novel self-aligned low thermal budget heterojunction bipolar transistor (HBT) device. The hydrogen growth ambient is shown to greatly facilitate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e6f9d8c6a4569c73e53978644baede8
https://doi.org/10.1149/1.2044320
https://doi.org/10.1149/1.2044320
Publikováno v:
Scopus-Elsevier
We report magnetotunneling measurements on strained p-Si/Si 1-x Ge x double-barrier resonant tunneling structures in fields up to 30 T. In the I(V, B∥) characteristics of the first heavy-hole peak we observe satellite resonances corresponding to tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c595d009f54b0fc68766ce3c6f55d19
https://doi.org/10.1016/0039-6028(94)90906-7
https://doi.org/10.1016/0039-6028(94)90906-7
Autor:
Shawn-Yu Lin, Detlev Grützmacher, T. O. Sedgwick, D. A. Syphers, Alexander Zaslavsky, T. P. Smith
Publikováno v:
Physical Review B. 48:15112-15115
We have observed strong peak shifts in the magnetotunneling I(V, B⊥) characteristics of strained p-Si/Si 1-x Ge x double-barrier resonant tunneling structures as the transverse field B⊥ orientation is rotated in the sample plane. These peak shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::048906c7f970b326d301e4b4c2243d58
https://doi.org/10.1103/physrevb.48.15112
https://doi.org/10.1103/physrevb.48.15112
Publikováno v:
Journal of The Electrochemical Society. 140:2703-2709
N and p-Type doping of epitaxially grown Si over the temperature range from 850 C to as low as 550 C was investigated in an atmospheric pressure reactor. P, As, and B could be incorporated into single-crystal silicon at levels exceeding the solid sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66cb6f7c83671aab6f9dc86030c4b955
https://doi.org/10.1149/1.2220890
https://doi.org/10.1149/1.2220890
Autor:
Shawn-Yu Lin, Detlev Grützmacher, T. O. Sedgwick, Alexander Zaslavsky, T. P. Smith, R. A. Kiehl
Publikováno v:
Physical Review B. 47:16036-16039
In magnetotunneling I(V,B ∥) measurements on strained p-type Si/Si 1-x Ge x double-barrier resonant tunneling structures we observe heavy-hole satellite peaks that correspond to tunneling with Δn=1 and 2 changes in the Landau index n. The relative
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2d0993aa5844bed6aec7195bed9ff42
https://doi.org/10.1103/physrevb.47.16036
https://doi.org/10.1103/physrevb.47.16036
Autor:
Alexander Zaslavsky, Adrian Powell, R. A. Kiehl, W. Ziegler, Detlev Grützmacher, J. Cotte, T. O. Sedgwick
Publikováno v:
Journal of Electronic Materials. 22:303-308
First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germaniu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e319567376ac1bb09b7b99c4e3f965c
https://doi.org/10.1007/bf02661381
https://doi.org/10.1007/bf02661381
Publikováno v:
ChemInform. 22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8528326d96aed2685f07f2323e5b62a
https://doi.org/10.1002/chin.199149301
https://doi.org/10.1002/chin.199149301
Autor:
T. O. Sedgwick, D. A. Gruetzmacher
Publikováno v:
ChemInform. 26
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::075a9d439b5605bb200edeb87384a31c
https://doi.org/10.1002/chin.199547305
https://doi.org/10.1002/chin.199547305