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pro vyhledávání: '"T. Nlarschner"'
Autor:
T. Nlarschner, Frans D. Tichelaar, R.T.H. Rongen, JH Joachim Wolter, M.R. Leys, C. A. Verschuren, H Vonk
Publikováno v:
Microelectronics Journal. 28:849-855
We present a study of changes in the layer morphology of tensilely strained GalnAs/InP multiple quantum well (MQW) structures in dependence on strain and substrate off-orientation. Growth was performed by chemical beam epitaxy (CBE). For high tensile
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60f8634aa348dc946a50986170af6291
https://doi.org/10.1016/s0026-2692(96)00124-3
https://doi.org/10.1016/s0026-2692(96)00124-3
