Zobrazeno 1 - 8
of 8
pro vyhledávání: '"T. N. Shchurova"'
Publikováno v:
Гений oртопедии, Vol 24, Iss 3, Pp 365-374 (2018)
Introduction Despite a great number of researches on idiopathic scoliosis reported there is still no instrumentation assessment of sensitivity before and after surgical correction of the curve found in literature. The purpose of the work was to explo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::41acb1bab858c530aa0462485f52629f
https://doi.org/10.18019/1028-4427-2018-24-3-365-374
https://doi.org/10.18019/1028-4427-2018-24-3-365-374
Publikováno v:
Sensor Electronics and Microsystem Technologies. 4:21-25
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbb00ca90f705725c93e0cf723ef5d7b
https://doi.org/10.18524/1815-7459.2007.4.114144
https://doi.org/10.18524/1815-7459.2007.4.114144
Publikováno v:
Surface and Interface Analysis. 38:448-451
We present experimental data on Auger analysis of the amorphous Ge33As12Se55 filmp-Si crystal heterojunction. The investigated depth profiles of the chemical components at the interface for the heterojunction revealed the presence of GeO2 and As2O3 f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0123b4b9e1964fd7f912a6b824ef9b31
https://doi.org/10.1002/sia.2297
https://doi.org/10.1002/sia.2297
Publikováno v:
Vacuum. 80:128-131
Time changes in refractive index and stress distribution across film thickness in the range from 10 to 10 6 s and the effect of thermal annealing on thin As 2 S 3 films deposited by thermal evaporation have been studied. A correlation between the ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a4fb5e4984654a4142b4eca95805238
https://doi.org/10.1016/j.vacuum.2005.07.030
https://doi.org/10.1016/j.vacuum.2005.07.030
Publikováno v:
SPIE Proceedings.
Thin films of 1,000-nm thickness were deposited from Ge33As12Se55 glass by flash evaporation onto n-Si substances coated with thermally evaporated antimony or bismuth layer of 10-nm thickness. Thermal annealing of the structure has been conducted at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd38efa23a449fcbfa996195def3b089
https://doi.org/10.1117/12.368410
https://doi.org/10.1117/12.368410
Publikováno v:
SPIE Proceedings.
High-energy electron (E equals 6.5 MeV) irradiation effect ((Phi) equals 10 16 cm -2 ) on the optical transmittance in the wavelength range from 0.4 micrometers to 25 micrometers for Ge, ZnSe, LiF, BaF 2 , KRS-5, Csl and chalcogenide glasses of IKS-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b329121c140c11329e005018046cc57
https://doi.org/10.1117/12.306273
https://doi.org/10.1117/12.306273
Publikováno v:
SPIE Proceedings.
The effect of the deposition rate, the substrate temperature, the annealing temperature, the laser and high energy electron irradiation on the mechanical stresses for the heterostructure obtained by thermal evaporation of Ge33As12Se55 film onto the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9433fdd65a4ae4aeb84eac22b34187a6
https://doi.org/10.1117/12.280453
https://doi.org/10.1117/12.280453
Publikováno v:
Japanese Journal of Applied Physics. 39:334
The photoemission threshold energy for Gex(As0.4Se0.6)1-x(x = 0, 0.1, 0.2, 0.3) glasses has been derived from the spectral distribution of the photoemission quantum efficiency in the near-threshold region. Glass densities and optical band gaps have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18935e10ee26d53d53ff5de30bf784b5
https://doi.org/10.7567/jjaps.39s1.334
https://doi.org/10.7567/jjaps.39s1.334