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pro vyhledávání: '"T. N. Novokhatskaya"'
Autor:
D. P. Nalivaiko, O. V. Podshivalova, S. V. Oleinik, Andrey S. Gerasimenko, V. K. Komar, T. N. Novokhatskaya, S. V. Sulima, O. N. Chugai
Publikováno v:
Physics of the Solid State. 55:60-63
The frequency and temperature dependences of the real and imaginary parts of the permittivity of Cr-doped (nCr ≅ 1018 cm−3) melt-grown ZnSe crystals have been measured in the low-frequency region. It has been established that such doping reduces