Výsledky vyhledávání - "T. N. Fogarty"

Effect of Proton Irradiation on Interface State Density in Sc2O3/GaN and Sc2O3/MgO/GaN Diodes

Autor: R. Dwivedi, S. J. Pearton, M. Hlad, C. R. Abernathy, Richard Wilkins, A. P. Gerger, K. K. Allums, T. N. Fogarty, Brent P. Gila, Fan Ren

Publikováno v: Journal of Electronic Materials. 36:519-523

Proton irradiation of Sc2O3/GaN and Sc2O3/MgO/GaN metal-oxide semiconductor diodes was performed at two energies, 10 MeV and 40 MeV, and total fluences of 5 × 109 cm−2, corresponding to 10 years in low-earth orbit. The proton damage causes a decre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::657a2e455ecdc8bd0c70972f6deb80e5
https://doi.org/10.1007/s11664-006-0035-y

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Effects of high dose proton irradiation on the electrical performance of ZnO Schottky diodes

Autor: Young-Woo Heo, Kelly P. Ip, Fan Ren, K.H. Baik, Stephen J. Pearton, Rohit Khanna, Richard Wilkins, R. Dwivedi, C. R. Abernathy, K. K. Allums, David P. Norton, T. N. Fogarty

Publikováno v: physica status solidi (a). 201:R79-R82

Bulk ZnO Schottky rectifiers with Pt rectifying contacts were exposed to 40 MeV protons at fluences from 5 x 109 to 5 x 10 10 cm -2 . These doses correspond to that received in more than 10 or 100 years, respectively, in low earth satellite orbit. Th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7a4b30aed83960e0f7b6c3d7ed5d1042
https://doi.org/10.1002/pssa.200409059

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Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Autor: Fan Ren, Robert C. Fitch, K. K. Allums, Richard Wilkins, A. H. Onstine, C. R. Abernathy, T. N. Fogarty, R. Dettmer, James K. Gillespie, Steve Pearton, T.J. Jenkins, J. Sewell, R. Dwivedi, Brent P. Gila, Randy J. Shul, B. Luo, Antonio Crespo, Albert G. Baca, Glen D. Via

Publikováno v: Solid-State Electronics. 47:1015-1020

AlGaN/GaN high electron mobility transistors with either MgO or Sc 2 O 3 surface passivation were irradiated with 40 MeV protons at a dose of 5×10 9 cm −2 . While both forward and reverse bias current were decreased in the devices as a result of d

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::16664b6ca1a3e7e65dea975193d393a0
https://doi.org/10.1016/s0038-1101(02)00468-9

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High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

Autor: T. N. Fogarty, Jerry W. Johnson, Amir M. Dabiran, C. R. Abernathy, Fan Ren, B. Luo, Peter Chow, Richard Wilkins, K. K. Allums, R. Dwivedi, C. J. Polley, A. M. Wowchack, Albert G. Baca, Stephen J. Pearton

Publikováno v: Journal of Electronic Materials. 31:437-441

AlGaN/GaN high-electron mobility transistors (HEMTs) show decreases in extrinsic transconductance, drain-source current threshold voltage, and gate current as a result of irradiation with 40 MeV protons at doses equivalent to decades in low-earth orb

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::83a5cb7a65e7f7a303656a852fd0f64b
https://doi.org/10.1007/s11664-002-0097-4

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Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

Autor: Tetsuya Mishima, Patrick M. Lenahan, Richard Wilkins, T. N. Fogarty, J.B. Jumper

Publikováno v: IEEE Transactions on Nuclear Science. 48:2131-2135

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P/sub b1/. This defect is somewhat different in electronic de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8fb7d0d5c8d7781435077ce7caa2d1e9
https://doi.org/10.1109/23.983184

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Ionization and displacement damage irradiation studies of quantum devices: resonant tunneling diodes and two-dimensional electron gas transistors

Autor: Roger K. Lake, Alan Seabaugh, G.F. Spencer, P. Stelmaszyk, T. N. Fogarty, Andreas D. Wieck, W. P. Kirk, S. Shojah-Ardalan, Richard Wilkins, R.T. Bate

Publikováno v: IEEE Transactions on Nuclear Science. 46:1702-1707

The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was investigated with ionizing and displacement damage radiation. The RTDs were subject to a m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::346680bc0c3d448f09d9c0fee48a8e8a
https://doi.org/10.1109/23.819142

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Application of radiation sources to simulate the radiation environment in low earth orbit: results on optoelectronic devices for International Space Station

Autor: Shojah S. Ardalan, T. N. Fogarty, Richard Wilkins

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 422:591-594

There is a trend toward evaluating the space worthiness of electronic devices under conditions that simulate the intended operating environment of the spacecraft as much as possible. We briefly discuss simulation of space radiation environments using

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2e99362262bc1c1be9cfaaf44d4da643
https://doi.org/10.1016/s0168-9002(98)00944-9

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