Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. N. Adam"'
Autor:
J. KOLODZEY, T. N. ADAM, R. T. TROEGER, P.-C. LV, S. K. RAY, I. YASSIEVICH, M. ODNOBLYUDOV, M. KAGAN
Publikováno v:
International Journal of Nanoscience. :171-176
Terahertz (THz) electroluminescence was produced by three different types of sources: intersubband transitions in silicon germanium quantum wells, resonant state transitions in boron-doped strained silicon germanium layers, and hydrogenic transitions
Publikováno v:
Microscopy and Microanalysis. 20:252-253
Autor:
Kathryn T. Schonenberg, Paul Ronsheim, Michael A. Gribelyuk, T. N. Adam, V. Ontalus, Jun Yuan
Publikováno v:
Microscopy and Microanalysis. 16:568-569
Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.
Autor:
P. R. Ronsheim, Kathryn T. Schonenberg, T. N. Adam, V. Ontalus, L. Kimball, Michael A. Gribelyuk
Publikováno v:
Journal of Applied Physics. 110:063522
Microstructure of Si1-xCx films grown epitaxially onto Si wafers was studied. Clusters formed by Si and interstitial carbon were observed in Si1-xCx films by transmission electron microscopy. It was found that the cluster size increases with the tota