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Publikováno v:
Radiation Physics and Chemistry. 58:603-606
A positron lifetime spectroscopy apparatus, which utilizes an intense pulsed positron beam generated by an electron linear accelerator, is presented. Using this apparatus we can measure positron lifetime spectra with variable energy, high count rate,
Autor:
T. Ohdaira, T. Mikado, S. Hishita, R. Suzuki, C. L. Wang, Kouichi Hirata, Yoshinori Kobayashi, H. Togashi
Publikováno v:
Journal of Applied Polymer Science. 79:974-980
Mixtures of hexamethyldisiloxane [HMDSiO, (CH3)3SiOSi(CH3)3] and oxygen are plasma polymerized at different oxygen pressures (P = 1.3–11.4 Pa) and a fixed monomer pressure (Pm = 2.6 Pa). The discharge power is kept at 100 W throughout the work. Nan
Publikováno v:
Applied Surface Science. 149:188-192
The thermal behavior of H-related defects in H-implanted Si has been investigated by positron beams. It is found that positrons are sensitive to the H-related defects and give a relatively low S parameter, equivalent to that of bulk Si, and a long li
Publikováno v:
Physical Review B. 58:12559-12562
The behavior of hydrogen-vacancy defects in silicon implanted with H ions $(1\ifmmode\times\else\texttimes\fi{}{10}^{16}/{\mathrm{cm}}^{2},$ 60 keV) has been investigated by means of a slow positron beam, in which both the positron lifetime and the D
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. :677-681
The apparatus for positron annihilation induced Auger electron spectroscopy (PAES) has been constructed at an intense slow-positron beam line of the Electrotechnical Laboratory. Experimental results with this apparatus show that PAES is a sensitive a
Publikováno v:
Physical Review Letters. 70:45-48
Ion-beam-induced crystallization in silicon preamorphized by Ge-ion implantation was studied by combined means of Rutherford backscattering and channeling, and positron annihilation. The epitaxial regrowth of amorphous surface layers in a 〈100〉 S
Autor:
T. Yamazaki, T. Mikado, Nobuyoshi Hayashi, Naoto Kobayashi, Kazuo Kuriyama, H. Watanabe, Ryoichi Suzuki, Isao Sakamoto
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :1006-1009
RBS channeling analysis and positron annihilation measurements were used to study ion beam induced crystallization in silicon. The epitaxial regrowth of amorphous surface layers in 〈100〉 oriented Si substrate has been performed under irradiation
Autor:
T. Mikado, R. Suzuki, M. Chiwaki, N. Shiotani, T. Chiba, Shoichiro Tanigawa, Takio Tomimasu, T. Akahane, T. Yamazaki
Publikováno v:
Applied Physics A Solids and Surfaces. 51:146-150
A facility for generating a high intensity slow positron beam using an electron linear accelerator has been constructed. A conversion efficiency of 6×10−7 slow positrons per incident electron has been obtained for 75 MeV electrons. Storage and str