Zobrazeno 1 - 7
of 7
pro vyhledávání: '"T. Michael Gibbons"'
Publikováno v:
Solid State Phenomena. 242:335-343
It is universally accepted that defects in materials scatter thermal phonons, and that this scattering is the reason why defects reduce the flow of heat relative to the defect-free material. However, ab-initio molecular-dynamics simulations which inc
Publikováno v:
Solid State Phenomena. :209-212
Unexpectedly large isotope effects have been reported for the vibrational lifetimes of the H-C stretch mode of the CH2*defect in Si and the asymmetric stretch of interstitial O in Si as well. First-principles theory can explain these effects. The res
Autor:
JACOBS, KRIS1,2, WANG, KEVIN Q.3
Publikováno v:
Journal of Finance (Wiley-Blackwell). Oct2004, Vol. 59 Issue 5, p2211-2252. 42p. 13 Charts, 4 Graphs.
Autor:
KROENCKE, TIM A.
Publikováno v:
Journal of Finance (John Wiley & Sons, Inc.). Feb2017, Vol. 72 Issue 1, p47-98. 52p. 10 Charts, 5 Graphs.
Autor:
Estreicher, Stefan K.
Publikováno v:
European Review; Jul2014, Vol. 22 Issue 3, p504-537, 34p
Autor:
J.D. Murphy
GADEST 2013Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Autor:
Peter Pichler
Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany