Zobrazeno 1 - 10
of 34
pro vyhledávání: '"T. Merelle"'
Autor:
Davies William de Lima Monteiro, Rubens A. Souza, Luciana P. Salles, Benoit Bataillou, Daniel M. Rocha, T. Merelle
Publikováno v:
2019 Global LIFI Congress (GLC).
LiFiX is the concept of a fully bi-directional integrated LiFi system featuring up to 64 emitter-receiver cells in an array meant to reach 26 Gb/s of bandwidth guarded by a high level of data-transmission security via frequency hopping using visible
Autor:
T. Merelle, Grigory Onushkin, Gabor Farkas, Lajos Gaal, Gusztav Hantos, Alessandro Di Bucchianico, Josephine Sari, Janos Hegedus, Robin Bornoff, Andras Poppe
Publikováno v:
PROCEEDINGS OF the 29th Quadrennial Session of the CIE
Publikováno v:
THERMINIC 2018-24th International Workshop on Thermal Investigations of ICs and Systems, Proceedings
There is a variation in the characteristics of an LED partly due to variation in the manufacturing process and the sourcing of materials from differing vendors. From a thermal perspective these variations result in differing thermal characteristics s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1774ee85f31d7a176ddf187655acb97
https://doi.org/10.1109/THERMINIC.2018.8593315
https://doi.org/10.1109/THERMINIC.2018.8593315
Autor:
Alessandro Di Bucchianico, Julien Joly, Eveliina Juntunen, Gabor Farkas, T. Merelle, Joël Thomé, Karel Bosschaartl, Emmanuel Vaumorin, Andras Poppe, Ferenc Szabó, Joan Yu
Publikováno v:
PROCEEDINGS OF THE CONFERENCE AT THE CIE MIDTERM MEETING 2017 23 – 25 OCTOBER 2017, JEJU, REPUBLIC OF KOREA
Publikováno v:
Solid State Lighting Reliability Part 2 ISBN: 9783319581743
LED lifetime and reliability are strong differentiators for a luminaire assembler. An LED being more a system and not a single device means reliability analyses are complex. The different subparts constituting the LED present different failure modes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4ac2120d46e06c47036e36c1f0d2216
https://doi.org/10.1007/978-3-319-58175-0_3
https://doi.org/10.1007/978-3-319-58175-0_3
Autor:
Eric Sterckx, Coen Tak, Hilco Suy, Filip Frederix, Romano Hoofman, A. Sedzin, J. Uberfeld, Friso Jacobus Jedema, K. Verheyden, F. H. M. Swartjes, T. Merelle, F. Widdershoven, D. Van Steenwinckel, B. Cobelens, R. van der Werf, M. Kengen
Publikováno v:
2010 International Electron Devices Meeting.
The detection principle, process integration and system architecture of a novel 90-nm CMOS-based mixed-signal capacitive biosensor with 256 × 256 densely packed nano-electrodes are presented. The sensor operates at modulation frequencies up to 200 M
Autor:
S. Biesemans, Blandine Duriez, Georgios Vellianitis, Stephan Brus, R. J. P. Lander, Bartlomiej Jan Pawlak, T. Merelle, T. Y. Hoffmann, Philippe Absil, A. De Keersgieter, A. Veloso, Rita Rooyackers, Nadine Collaert, Ray Duffy, M.J.H. van Dal, M. Jurczak, L Witters, Augusto Redolfi
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Autor:
P. Parvais, Guido Groeseneken, Stefaan Decoutere, Felice Crupi, Paolo Magnone, Nadine Collaert, Morin Dehan, J. Benson, R.J.P. Lander, V. Subramanian, Calogero Pace, Abdelkarim Mercha, T. Merelle
In this letter, the matching performances of FinFET devices with high-k dielectric, metal gates, and fin widths down to 10 nm are experimentally analyzed. The stochastic variation of threshold voltage and current factor is examined for both p- and n-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b708c820c7cc9a074e4547d099b813b
http://hdl.handle.net/11577/3292769
http://hdl.handle.net/11577/3292769
Autor:
Axel Nackaerts, Nadine Collaert, Liesbeth Witters, Georgios Vellianitis, T.S. Doorn, Rita Rooyackers, Malgorzata Jurczak, T. Merelle, F.C. Voogt, Blandine Duriez, M.J.H. van Dal, Bartek Pawlak, G. Curatola, Gerben Doornbos, R.J.P. Lander, Ray Duffy, Phillip Christie
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Vt-mismatch, and thus SRAM scalability, is greatly improved in narrow SOI FinFETs, with respect to planar bulk, because of their undoped channel and near-ideal gate control. We show by simulations and by measurements that in FinFETs, unlike planar bu
Autor:
Liesbeth Witters, Luis A. Marqués, J. G. M. van Berkum, Bartek Pawlak, Rita Rooyackers, Nadine Collaert, Monja Kaiser, Pedro López, María Aboy, Gerben Doornbos, Malgorzata Jurczak, T. Merelle, M.J.H. van Dal, Wilfried Vandervorst, R. G. R. Weemaes, Blandine Duriez, P. Breimer, Iván Santos, Lourdes Pelaz, R.J.P. Lander, Ray Duffy
Publikováno v:
2008 IEEE International Electron Devices Meeting.
Source/drain formation in ultra-thin body devices by conventional ion implantation is analyzed using atomistic simulation. Dopant retention is dramatically reduced by backscattering for low-energy and low-tilt angles, and by transmission for high ang