Zobrazeno 1 - 10
of 83
pro vyhledávání: '"T. Melde"'
Publikováno v:
Few-Body-Systems. 32:143-168
We formulate the three-body problem in one dimension in terms of the (Faddeev-type) integral equation approach. As an application, we develop a spinless, one-dimensional (1-D) model that mimics three-nucleon dynamics in one dimension. Using simple tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccf8c1cdf05c86981354807c2a1029e3
https://doi.org/10.1007/s00601-002-0114-4
https://doi.org/10.1007/s00601-002-0114-4
Autor:
T Melde
Publikováno v:
Canadian Journal of Physics. 77:167-175
We introduce a new photon number density operator in the Gupta-Bleuler quantized photon field and show that the corresponding total number operator counts transverse photons in the new model. It is also shown that the suggested operator interpreted i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e42fc5f8cd171ef9a434247b34e3ba1
https://doi.org/10.1139/p99-018
https://doi.org/10.1139/p99-018
Autor:
Willibald Plessas, T. Melde
Publikováno v:
Few-Body Systems. 44:83-85
We report some recent developments in the theoretical description of strong baryon-resonance decays within relativistic constituent-quark models. In particular, we address covariant predictions for partial decay widths obtained with a spectator-model
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252a7cd6ec06a6b2494e8fb3218c1cf4
https://doi.org/10.1007/s00601-008-0262-2
https://doi.org/10.1007/s00601-008-0262-2
Autor:
T. Melde, Margaret Hawton
Publikováno v:
Physical Review A. 51:4186-4190
A photon number density operator proportional to the dot product of the electric field and the vector potential is introduced as an alternative to the Mandel operator. In the Lorentz gauge it is the time component of the four-vector obtained by contr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c91c90c21dbeae5841c1a65a382e23ad
https://doi.org/10.1103/physreva.51.4186
https://doi.org/10.1103/physreva.51.4186
Publikováno v:
2010 IEEE International Integrated Reliability Workshop Final Report.
In this publication a formula is developed to describe the program level dependent charge loss of charge trapping memory cells. We demonstrate that the retention loss can be calculated using 5 parameters with an excellent agreement to the measured re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3ad0e8e68adc7d13382dd8af7c6b905
https://doi.org/10.1109/iirw.2010.5706502
https://doi.org/10.1109/iirw.2010.5706502
Autor:
Malte Czernohorsky, V. Beyer, M. I. Vexler, T. Melde, M. Klawitter, A. Kuligk, C. D. Nguyen, Bernd Meinerzhagen
Publikováno v:
2010 International Conference on Simulation of Semiconductor Processes and Devices.
The hot electron induced mechanism disturbing the stored information in inhibited bit lines during the programming of nonvolatile memories with NAND architecture is studied in detail using a new dedicated advanced physical simulation scheme for the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e5bc38db20de799b2cc856204b3f9d
https://doi.org/10.1109/sispad.2010.5604512
https://doi.org/10.1109/sispad.2010.5604512
Autor:
Malte Czernohorsky, T. Melde, R. Hoffmann, Konrad Seidel, Jan Paul, D. A. Lohr, M. F. Beug, V. Beyer
Publikováno v:
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).
In this work we present a systematic investigation concerning the correlation of Random Telegraph Noise (RTN) with erratic bits in sub-50nm floating gate NAND memory cells. Both effects are compared with respect to their implication in reliability an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0590f5a5b1bb2a597f614f3086fe520
https://doi.org/10.1109/nvmt.2009.5429788
https://doi.org/10.1109/nvmt.2009.5429788
Autor:
M.F. Beug, A.T. Tilke, R. Hoffmann, Malte Czernohorsky, L. Bach, D. A. Lohr, T. Melde, Roman Knoefler, U. Bewersdorff-Sarlette, Konrad Seidel, V. Beyer, Jan Paul
Publikováno v:
2009 IEEE International Memory Workshop.
This paper presents charge trapping (CT) cells integrated with a sacrificial liner at the word line (WL) side wall which improves significantly the erase and retention characteristics, currently the main issues in CT memory devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9cd257f86be1358a3aa6bd037de8196
https://doi.org/10.1109/imw.2009.5090595
https://doi.org/10.1109/imw.2009.5090595
Autor:
Malte Czernohorsky, Roman Knoefler, L. Bach, Thomas Mikolajick, U. Bewersdorff-Sarlette, A.T. Tilke, T. Melde, M.F. Beug, V. Beyer, Jan Paul
Publikováno v:
IEEE Electron Device Letters
This letter investigates a new select device disturb phenomenon in TANOS NAND flash memories. Since NAND string select devices contain the same charge trap (CT) stack as the memory cells, they are, in principle, programmable. We observe a select thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35a6677eddcac63fc2e7e06155cdb601
Publikováno v:
Physical review letters. 102(13)
We present a microscopic derivation of the form factors of strong-interaction piNN and piNDelta vertices within a relativistic constituent quark model. The results are compared with form factors from phenomenological meson-baryon models and recent la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3657fa099c052974772a0521604e78c
https://pubmed.ncbi.nlm.nih.gov/19392348
https://pubmed.ncbi.nlm.nih.gov/19392348