Zobrazeno 1 - 10
of 99
pro vyhledávání: '"T. Marschner"'
Publikováno v:
Microelectronic Engineering. :673-681
In this paper, we have investigated the linearity of the electrical linewidth measurement, and the relation to the linewidth values measured with a CD-SEM. The collected data has shown an almost constant bias between ELM and SEM values tested down to
Publikováno v:
Physica E: Low-Dimensional Systems & Nanostructures, 2(1-4), 873-877. Elsevier
We present X-ray diffraction (XRD) investigations of the influence of the substrate off-orientation on the relaxation of InAsP layers grown on InP by chemical beam epitaxy (CBE). Our measurements show that with beginning relaxation the As-concentrati
Publikováno v:
Journal of Applied Physics. 84:237-247
The influence of layer thickness fluctuations and deviation from perfect periodicity on high resolution x-ray diffraction (HR XRD) profiles are investigated experimentally and theoretically for (GaIn)As/Ga(PAs) symmetrically strained multiple quantum
Publikováno v:
Journal of Crystal Growth. 188:11-16
The growth rate and the diffusion length are crucial parameters from the viewpoint of both growth kinetics and applications, notably in the emerging field of selective area epitaxy. We have found that the vertical (1 0 0) growth rate of InP grown by
Publikováno v:
Journal of Applied Physics, 83(7), 3630-3637. American Institute of Physics
We present x-ray diffraction (XRD) investigations of the structure of nominally lattice-matched GaInAs/InP multiple quantum well (MQW) structures grown by chemical beam epitaxy (CBE). To obtain information about the individual MQW layers and the inte
Publikováno v:
Journal of Crystal Growth. :1081-1086
GaInAs InP multiple quantum well (MQW) layers with high tensile strain in the GaInAs layers have been grown by chemical beam epitaxy (CBE). The samples were analysed by high-resolution X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and
Publikováno v:
Physical Review B. 55:9960-9968
Diffuse x-ray reflection from a multilayer with stepped interfaces has been investigated theoretically and experimentally. The statistical description of the stepped interfaces has been based on the theory of random processes. Diffuse x-ray scatterin
Publikováno v:
Physical Review B. 55:5276-5283
In this work we investigate the structural properties of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of x-ray diffraction, reciprocal-space mapping, and x-ray reflectivity. The multilayers were grown by metalorganic vapor
Publikováno v:
Il Nuovo Cimento D. 19:377-383
In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic vapour phase epitaxy on (001)GaAs substrates, w
Publikováno v:
Journal of Materials Science Materials in Electronics. 8:289-299
Lateral thickness modulations of epitaxial layers have been observed in symmetrically strained (GaIn)As/Ga(AsP) superlattices grown on misoriented (0 0 1) GaAs substrates by metallorganic vapour phase epitaxy. Systematic studies on the structural cha