Zobrazeno 1 - 10
of 137
pro vyhledávání: '"T. Makimura"'
Publikováno v:
Springer Proceedings in Physics ISBN: 9783319730240
We have investigated photo-direct micromachining of PDMS sheets using laser plasma EUV radiations. The EUV light was radiated from laser plasma. The generated EUV light was focused using an ellipsoidal mirror and was incident on PDMS sheets through w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92c173604cff83b3a5b63382c4fe567c
https://doi.org/10.1007/978-3-319-73025-7_57
https://doi.org/10.1007/978-3-319-73025-7_57
Autor:
M. Murahara, M. Tomita, T. Ikegame, S. Itoh, K. Hatao, Itsuo Nagata, H. Niino, A. Yabe, J. Krager, W. Kaütek, M. YODA, N. MUKAI, M. KIMURA, S. OKADA, T. KONAGAI, N. HAYASHIA, H. HOZUMI, H. IGAKURA, Y. TOGASAWA, M. OCHIAI, J. SENBOSHI, M. KIKUNAGA, K. SATO, M. OBATA, K. ASANO, S. NAKAYAMA, Y. SANO, H. TAKAHASHI, T. Mori, M. Motizuki, K. Nakada, T. Okamoto, T. Suzuki, T. Ueda, T. Makimura, K. Murakami, Taro Ninomiya, Toshiaki Monnaka, Narumi Inoue, Shigeru Kashiwabara, T. Sato, T. Kadomura, D. Watanabe, H. Okado, K. Toyoda, S. Nakajima, S. Kondo, J. Morimoto, N. Toshima, T. Kumita, T. Hashizume, K. Makino, T. Mizuta, S. Tokunaga, S. Yoshihara, J. Kawanaka, J. Yokotani, K. Kurosawa, S. Kubodera, W. Sasaki, Jie Zhang, Koji Sugioka, Satoshi Wada, Hideo Tashiro, Koichi Toyoda, Takahisa Itsuno, Katsumi Midorikawa, Y P Kathuria
Publikováno v:
The Review of Laser Engineering. 26:115-124,129
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fced77403e57fdb6f49583c05dc48113
https://doi.org/10.2184/lsj.26.supplement_115
https://doi.org/10.2184/lsj.26.supplement_115
Publikováno v:
Journal of Physics: Condensed Matter. 6:4581-4600
We have measured time-resolved optical absorption spectra following the excitation of the self-trapped excitons (STEs) in NaCl from the lowest triplet state to the next higher electron-excited state. In addition to the rapid reduction of the band due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b4336680651a5fe02721690d60f2d46
https://doi.org/10.1088/0953-8984/6/24/018
https://doi.org/10.1088/0953-8984/6/24/018
Publikováno v:
Applied Physics A: Materials Science & Processing. 69:S13-S15
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ac4096f3e50564ee365e22213b07f0
https://doi.org/10.1007/s003390051347
https://doi.org/10.1007/s003390051347
Akademický článek
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Publikováno v:
Proceedings of 1994 IEEE GaAs IC Symposium.
We have developed a high-output-voltage monolithically integrated driver circuit for an external optical modulator using InGaP/GaAs HBTs with a collector breakdown voltage, BVceo, of 14 V. The driver circuit consists of an input buffer stage, two dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35dfbe956bbb8963bc404d250af6166f
https://doi.org/10.1109/gaas.1994.636968
https://doi.org/10.1109/gaas.1994.636968
Publikováno v:
Digest of Papers Microprocesses and Nanotechnology 2005.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd99206acd729a98bdc5fa4255b7e211
https://doi.org/10.1109/imnc.2005.203778
https://doi.org/10.1109/imnc.2005.203778
Publikováno v:
Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).
InAlP/InAlAs/InGaAs/InP HEMTs that offer improved breakdown voltages and reduced gate leak currents are investigated. The InAlP-layer has a larger etching selectivity compared to InAlAs and InGaAs, which is very effective in Vth control. Moreover, it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06878e033668eb87a3ce7d43ed806ded
https://doi.org/10.1109/iciprm.1999.773697
https://doi.org/10.1109/iciprm.1999.773697
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
Reliable, small-size, and high-speed AlGaAs/GaAs HBTs (heterojunction bipolar transistors) have been developed using a carbon-doped thin base layer and O/sup +/-implant E/B (emitter/base) junction isolation. This isolation reduces the recombination c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f289db7017b24a58d3f6f0668b047200
https://doi.org/10.1109/iedm.1991.235273
https://doi.org/10.1109/iedm.1991.235273