Zobrazeno 1 - 9
of 9
pro vyhledávání: '"T. M. Tkacheva"'
Publikováno v:
Сучасна педіатрія: Україна, Iss 7(103), Pp 33-43 (2019)
За даними співробітників кафедри педіатрії №1 НМАПО, в останні 20 років спостерігається зростання кількості госпіталізацій дітей із зап
Externí odkaz:
https://doaj.org/article/6463524176964d7180da5f9b47a619e8
Publikováno v:
World of Transport and Transportation. 19:230-245
The objective of this article is to identify pedagogical technologies traditionally used in full-time education, which found their place when educational formats changed in the era of digital transformation. The discussion concerns the project method
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 832:012068
The article analyzes the use of new digital technologies in transport education considering the Moscow Automobile and Road Construction State Technical University (MADI) as an example. The results Massive Open Online Courses (MOOC) and other electron
Publikováno v:
Solid State Phenomena. :171-176
Autor:
T. M. Tkacheva
Publikováno v:
2013 International Conference on Interactive Collaborative Learning (ICL).
In this paper new conception of technical teachers' professional competency improving is considered. There are several examples of different ways for young or experienced teachers training. Projective education, working with projects and other traini
Publikováno v:
Acta Physica Hungarica. 70:177-181
The properties (resistivity, oxygen content, carbon content, microdefect density) of silicon single crystals (M−Si) grown by the Czochralski technique using various magnetic fields (constant vertical field, rotating transversal field as well as com
Publikováno v:
Early Stages of Oxygen Precipitation in Silicon ISBN: 9789401066457
The demands of device producers for very low impurity content in Si, gives rise to a necessity to pay attention to the impurity concentration in the raw material. The analysis of impurity distribution in quartz of various genotypes shows that the mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac2d7612309c45eafeddf96da742fdd
https://doi.org/10.1007/978-94-009-0355-5_43
https://doi.org/10.1007/978-94-009-0355-5_43
Publikováno v:
Kristall und Technik. 16:95-99
The influence of plastic deformation on temperature dependence of carrier concentration n and mobility μ in PbS crystals has been studied. Comparison of the results obtained with selective etching patterns from original and deformed crystals makes i
Autor:
T. M. Tkacheva, L. S. Milevskii
Publikováno v:
Kristall und Technik. 16:251-254