Zobrazeno 1 - 10
of 16
pro vyhledávání: '"T. M. Gadzhiev"'
Autor:
T. M. Gadzhiev, M. A. Aliev, A. M. Ismailov, A. M. Aliev, G. A. Aliev, Z. Kh. Kalazhokov, M. R. Tlenkopachev, Kh. Kh. Kalazhokov, A. Sh. Asvarov, A. E. Muslimov, V. M. Kanevsky
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:1146-1149
Publikováno v:
Russian Physics Journal. 62:1674-1678
The CuIn0.95Ga0.05Se2 films 0.6 – 1.5 μm thick have been prepared at selenization temperatures from 300°C to 500°C and studied by Raman spectroscopy methods. The interval of the selenization temperatures and the minimum thickness of the metal la
Autor:
B. A. Bilalov, A. Sh. Asvarov, R. M. Gadzhieva, A. M. Ismailov, T. M. Gadzhiev, M. A. Aliev, Z. V. Shomakhov
Publikováno v:
Semiconductors. 53:1992-1998
Depending on the choice of the technology for producing CuInxGa1 – xSe2 films, a spread in the electrophysical and photoelectric parameters of photoconverters is observed, which is primarily related to the microstructure formed in the films and the
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 13:950-954
Polycrystalline CuIn0.95Ga0.05Se2 films are obtained by a two-step procedure of the controlled selenization of intermetallic CuIn0.95Ga0.05 layers. The effect of the selenization temperature and the selenized intermetallic-film thickness on the struc
Publikováno v:
Izvestiya vysshikh uchebnykh zavedenii. Fizika. :123-126
Autor:
M. A. Aliev, E. N. Kozyrev, V. I. Filonenko, I. N. Goncharov, R. O. Askerov, T. M. Gadzhiev, B. A. Bilalov, A. R. Aliev, A. M. Ismailov
Publikováno v:
Journal of Communications Technology and Electronics. 63:936-940
Photosensitive polycrystalline CuIn0.95Ga0.05Se2 thin films have been formed on glass, aluminum, and nanoporous Al/Al2O3 substrates by means of two-step selenization in a gas (nitrogen) flow carrying a reaction component (selenium). The structural pr
Publikováno v:
Technical Physics Letters. 42:715-717
A production technology of thin CuIn0.95Ga0.05Se2 films has been developed based on the method of two-stage selenization of CuIn0.95Ga0.05 precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of
Publikováno v:
Inorganic Materials. 44:1295-1299
The CuInSe2 films obtained by selenization and quasi-equilibrium deposition are investigated by elemental, X-ray phase, and chemical analyses. Temperature dependences of electric parameters are determined and photoelectric measurements are performed.
Publikováno v:
Urologiia i nefrologiia. (5)
The paper deals with ultrasound diagnosis as a modality able to recognize indications either to surgical or endovascular treatment of varicocele. Forty-two patients aged 12-28 with varicocele degree I-III were examined using sector ultrasonic transdu
Publikováno v:
Vestnik khirurgii imeni I. I. Grekova. 145(12)
The article is devoted to search for indications and more exact differential diagnostic criteria of angiographic methods of diagnosis of pyo-inflammatory diseases of the kidney. Of most informative value is the selective renal arteriography and pharm