Zobrazeno 1 - 10
of 67
pro vyhledávání: '"T. Lehnhardt"'
Autor:
T. Lehnhardt, M. Sauerbier
Publikováno v:
Trauma und Berufskrankheit. 15:158-164
Nach Komplexverletzungen der Hand, die mit einer Sehnenbeteiligung einhergehen, Infektionen oder bereits versorgten Verletzungen mit weiter bestehenden funktionellen Defiziten sowie nach Operationen mit neu aufgetretenen Schwierigkeiten ist eine oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af3aecd4d433e5c36b150ae86d20092a
https://doi.org/10.1007/s10039-013-1956-3
https://doi.org/10.1007/s10039-013-1956-3
Publikováno v:
IEEE Photonics Technology Letters. 23:371-373
GaSb-based diode lasers emitting at a wavelength of 2.8 μm have been grown. The devices feature GaSb or Al0.21 Ga0.58 In0.21 As0.20 Sb0.80 barrier layers for the quantum wells, respectively. The transparency current density, modal gain, internal abs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6addd5a5e83827653f3fb3cde0b944aa
https://doi.org/10.1109/lpt.2011.2106487
https://doi.org/10.1109/lpt.2011.2106487
Publikováno v:
Surface and Interface Analysis. 43:673-675
Depth profile analysis of GaAs/AlGaAs and GaSb/AlGaSb heterostructures was performed by SIMS and optimized with respect to the depth resolution. Different sputter ions like caesium, oxygen and argon were used with various sputter angles and ion energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c666d2e5b22f3651585b3be0a4241470
https://doi.org/10.1002/sia.3659
https://doi.org/10.1002/sia.3659
Publikováno v:
IEEE Photonics Technology Letters. 21:36-38
We have fabricated continuous-wave GaInAsSb-AlGaAsSb distributed-feedback (DFB) lasers in the 2.8- mum range, using a DFB concept requiring no subsequent overgrowth steps, by defining first-order Cr-Bragg gratings laterally to a ridge waveguide. We h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54c9e57714908e5922678a64226ebbab
https://doi.org/10.1109/lpt.2008.2005846
https://doi.org/10.1109/lpt.2008.2005846
Publikováno v:
IEEE Photonics Technology Letters. 20:2162-2164
The authors present distributed Bragg reflector (DBR) tapered lasers fabricated on the GaInSb-AlGaAsSb material system. These index guided tapered lasers are equipped with first-order chromium DBRs acting as frequency-selective mirrors on the rear fa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83fd293df76f49f913821621d09ae728
https://doi.org/10.1109/lpt.2008.2007303
https://doi.org/10.1109/lpt.2008.2007303
Publikováno v:
IEEE Photonics Technology Letters. 20:1100-1102
The authors present coupled cavity lasers on the AlGaIn-AsSb material system embedded in a matrix of two-dimensional photonic crystals serving both as interruption between the cavities and as highly reflecting micro-scaled-back mirrors. These widely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88973bed5b0e76eeaa801f577a76581
https://doi.org/10.1109/lpt.2008.924312
https://doi.org/10.1109/lpt.2008.924312
Publikováno v:
IEEE Photonics Technology Letters. 19:592-594
Wide range tunable lasers based on the coupling of two Fabry-Peacuterot resonators have been realized in the (AlGaIn)(AsSb) material system. The laser consists of two longitudinally oriented ridge waveguide cavities coupled through an etched gap. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc4eabf493df30f2275094cb46e11b5e
https://doi.org/10.1109/lpt.2007.894290
https://doi.org/10.1109/lpt.2007.894290
Publikováno v:
IEEE Photonics Technology Letters. 18:1424-1426
We have realized compressively strained GaInAsSb-GaSb type-II double quantum-well lasers with an emission wavelength of 2.8 mum. Using broad area devices, an internal absorption of 9.8 cm-1 and an internal quantum efficiency of 0.57 is determined. Fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ddbe0cb9f37ba2234a8ef6d41b0e007
https://doi.org/10.1109/lpt.2006.877232
https://doi.org/10.1109/lpt.2006.877232
Publikováno v:
Nanotechnology. 19(26)
We present a multi-segment photonic crystal coupled cavity laser device on GaSb with a microstructured internal photodiode. This monolithically integrated power monitor is added as a third segment to a coupled cavity laser and is separated from the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be441bd7b3aca39b1ccee13d3055ccb4
https://pubmed.ncbi.nlm.nih.gov/21828675
https://pubmed.ncbi.nlm.nih.gov/21828675
Publikováno v:
Semiconductor Science and Technology
An overview of the three competing mid-infrared semiconductor laser approaches, being diode, quantum cascade and interband cascade laser designs, is given. Limiting factors as well as unique possibilities of each approach are discussed. Several desig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1c52514fb8941e0a01b6d7661db7073