Zobrazeno 1 - 10
of 30
pro vyhledávání: '"T. L. Tansley"'
Autor:
T. L. Tansley, S. J. T. Owen
Publikováno v:
Active and Passive Electronic Components, Vol 3, Iss 2, Pp 67-75 (1976)
Externí odkaz:
https://doaj.org/article/c77c770c87b34dd8b3e132ab8462a0eb
Publikováno v:
Journal of Applied Physics. 80:5342-5347
Optical transitions for the (001) Al0.3Ga0.7As/AlAs/GaAs double‐barrier superlattices are evaluated by a semiempirical, tight‐binding calculation. The oscillator strength between the hole and electron states confined in either Γ‐ or X‐like w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c67548f7c68f50c275ad6fb0f826ed3
https://doi.org/10.1063/1.363473
https://doi.org/10.1063/1.363473
Autor:
J. W. Orton, D. E. Lacklison, N. Baba-Ali, C. T. Foxon, T. S. Cheng, S. V. Novikov, D. F. C. Johnston, S. E. Hooper, L. C. Jenkins, L. J. Challis, T. L. Tansley
Publikováno v:
Journal of Electronic Materials. 24:263-268
Bearing in mind the problems of finding a lattice-matched substrate for the growth of binary group III nitride films and the detrimental effect of the large activation energy associated with acceptors in GaN, we propose the study of the alloy system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6c28e5fe02ca6deca7dbcc9aed5315a
https://doi.org/10.1007/bf02659685
https://doi.org/10.1007/bf02659685
Publikováno v:
Journal of Applied Physics. 75:7365-7372
Electron mobilities in GaN and InN are calculated, by variational principle, as a function of temperature for carrier concentrations of 1016, 1017, and 1018 cm−3 with compensation ratio as a parameter. Both GaN and InN have maximum mobilities betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d25ffa3ac7b0822377d4db5d4359339e
https://doi.org/10.1063/1.356650
https://doi.org/10.1063/1.356650
Autor:
D. S. Maddison, T. L. Tansley
Publikováno v:
Journal of Applied Physics. 72:4677-4682
The electronic transport mechanism in polypyrrole is discussed in terms of Mott variable range hopping (VRH) in samples with a wide range of conductivities and which have been formed using different doping techniques. Samples were synthesized in both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e425791ceb9864a46e1a31781f1a326a
https://doi.org/10.1063/1.352073
https://doi.org/10.1063/1.352073
Autor:
Xin Li, T. L. Tansley
Publikováno v:
Journal of Applied Physics. 72:4125-4129
The correlation deep level transient spectroscopy (DLTS) method is developed for insulator/semiconductor interface studies. Trap transient modeling indicates that the energy range in which the trap transients can contribute to the DLTS signals of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e51b126e15c54fe24fc5b14b3f91f95
https://doi.org/10.1063/1.352219
https://doi.org/10.1063/1.352219
Autor:
D. S. Maddison, T. L. Tansley
Publikováno v:
Journal of Applied Physics. 71:1831-1837
Pressure dependence of the electrical conductivity of a range of polypyrrole samples doped to various levels is interpreted in terms of variable‐range hopping theory. All samples are well described by a model that treats the density of localized st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5147e386d2e512c99f32fd2ede585824
https://doi.org/10.1063/1.351167
https://doi.org/10.1063/1.351167
Publikováno v:
WIT Transactions on Modelling and Simulation, Vol 46.
A new metric system called the electron metric system, having a basic metric constant, is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconduct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09384db1cff160898975af90018a0f7c
https://doi.org/10.2495/cmem070081
https://doi.org/10.2495/cmem070081
Publikováno v:
Applied Physics Letters. 65:1430-1432
We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x‐ray diffraction (DCXRD) data for a p‐doped InGaAs/AlGaAs strained multi‐ ple‐quantum‐well structure grown by molecular beam epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4aeeae54a62f7d58d4d0cd7c4423a13
https://doi.org/10.1063/1.112006
https://doi.org/10.1063/1.112006
Autor:
D. S. Maddison, T. L. Tansley
Publikováno v:
Journal of Applied Physics. 69:7711-7713
The conductivity of doped polypyrrole, as high as 100 Scm−1 in freshly prepared samples, falls slowly with time on exposure to atmospheric oxygen. Typically, the fall in conductivity is fairly slow at room temperature, but the process can be accele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da55ee30d225a58f3fc7f2fe678c87df
https://doi.org/10.1063/1.347544
https://doi.org/10.1063/1.347544