Zobrazeno 1 - 10
of 21
pro vyhledávání: '"T. L. Shofner"'
Publikováno v:
Journal of Electronic Materials. 30:360-366
Continued shrinking of feature sizes in integrated circuits has raised increasing reliability concern. In order to achieve higher packing density, interconnects are migrating toward borderless contacts and vias. The penalty with the absence of metal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fcba5e1b83ede049b772a7cef769260
https://doi.org/10.1007/s11664-001-0044-9
https://doi.org/10.1007/s11664-001-0044-9
Publikováno v:
Journal of Applied Physics. 89:2130-2133
Electromigration-induced resistance behavior of via-terminated metal lines was studied. We found a strong correlation between void morphology and step-like resistance behavior. For the lines which exhibit pronounced resistance steps, voids are formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88431a074767935af69b630ebd10611
https://doi.org/10.1063/1.1340004
https://doi.org/10.1063/1.1340004
Autor:
R. B. Irwin, F. Hillion, B.B. Rossie, T. L. Shofner, R. H. Mills, Fred A. Stevie, M. J. Antonell, S. R. Brown, B. M. Purcell, Catherine Vartuli, Lucille A. Giannuzzi
Publikováno v:
Surface and Interface Analysis. 31:345-351
Commercially available focused ion beam (FIB) workstations with spatial resolution of 5–7 nm can prepare specimens with excellent lateral resolution. This capability has been utilized extensively by the semiconductor industry to obtain materials ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2221d3113f96e783648862828134044e
https://doi.org/10.1002/sia.1063
https://doi.org/10.1002/sia.1063
Autor:
R. B. Irwin, C. C. Yeh, Catherine Vartuli, J. S. Huang, King-Ning Tu, J. L. Drown, T. L. Shofner, Chih Chen
Publikováno v:
Journal of Materials Research. 15:2387-2392
Stability of submicron contacts under high current density has been an outstanding reliability issue in advanced Si devices. Polarity effect of failure was observed in Ni and Ni2Si contacts on n+-Si and p+-Si. In this report, we studied the failure d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbed30dcebc12fa45df7553b52d4426
https://doi.org/10.1557/jmr.2000.0343
https://doi.org/10.1557/jmr.2000.0343
Autor:
Fred A. Stevie, R. B. Irwin, T. L. Shofner, B. I. Prenitzer, S. R. Brown, K. Newman, Lucille A. Giannuzzi
Publikováno v:
Metallurgical and Materials Transactions A. 29:2399-2406
Particles of Zn powder have been studied to show that high-quality scanning electron microscope (SEM) and transmission electron microscope (TEM) specimens can be rapidly produced from a site-specific region on a chosen particle by the focused ion bea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e872428712060267c19103c96fed16
https://doi.org/10.1007/s11661-998-0116-z
https://doi.org/10.1007/s11661-998-0116-z
Autor:
M. A. Decker, Fred A. Stevie, J. L. Drown, Yaw S. Obeng, B.B. Rossie, S. R. Brown, T. L. Shofner
Publikováno v:
International Symposium for Testing and Failure Analysis.
The focused ion beam system (FIB) has become a valuable tool for the preparation of transmission electron microscope (TEM) samples. Several FIB preparation techniques exist but of particular interest is the lift-out technique, which allows for the ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41e841f194e6f434beecff74575840ea
https://doi.org/10.31399/asm.cp.istfa2000p0459
https://doi.org/10.31399/asm.cp.istfa2000p0459
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
Localized plan view TEM samples have been prepared from silicon semiconductor wafers using the focused ion beam lift-out technique. Two different methods of sample preparation before FIB machining were found to be successful: mounting cleaved samples
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d40658532c3ab8ee1ecc6e53f49344d
https://doi.org/10.1063/1.56881
https://doi.org/10.1063/1.56881
Publikováno v:
Microscopy and Microanalysis. 7:940-941
Advantages of the FIB lift-out technique over traditional H-bar TEM specimen preparation have been recognized. The ability to rapidly (< 1 hour) prepare a site specific TEM specimen without destroying the entire bulk specimen has led to a wide spread
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba00471860040f9918b24902fb7b67f2
https://doi.org/10.1017/s1431927600030774
https://doi.org/10.1017/s1431927600030774
Autor:
S. D. Anderson, B. M. Purcell, T. L. Shofner, S. R. Brown, Fred A. Stevie, B. B. Rossie, R. B. Irwin, A. Scwhitter, J. M. McKinley, Catherine Vartuli
Publikováno v:
Microscopy and Microanalysis. 7:200-201
Energy Dispersive Spectrometry (EDS) is an ubiquitous method of elemental analysis for SEM, TEM, and STEM applications. The elements of interest are generally quantified without standards using theoretical calculations or by using standards that are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4c4b55d6a06cc5da19df41aa18afca
https://doi.org/10.1017/s1431927600027070
https://doi.org/10.1017/s1431927600027070
Autor:
R. B. Irwin, R. J. Wesson, J. M. McKinley, Fred A. Stevie, B. M. Purcell, Catherine Vartuli, Lucille A. Giannuzzi, T. L. Shofner
Publikováno v:
Microscopy and Microanalysis. 6:536-537
Energy Dispersive Spectrometry (EDS) is generally calibrated for quantification using elemental standards. This can introduce errors when quantifying non-elemental samples and does not provide an accurate detection limit. In addition, variations betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::224dc301909e910973a58e18c7953b05
https://doi.org/10.1017/s1431927600035170
https://doi.org/10.1017/s1431927600035170