Zobrazeno 1 - 2
of 2
pro vyhledávání: '"T. L. Kreifels"'
Autor:
Mohammad Fatemi, T. L. Kreifels, Robert L. Hengehold, Yung Kee Yeo, Mark E. Twigg, Karl D. Hobart, David S. Simons, M. Gregg, Phillip E. Thompson
Publikováno v:
Journal of Crystal Growth. 157:21-26
Undoped and boron-doped multiple quantum well heterostructures composed of Si1 − xGex have been grown on Si(110) and Si(111) substrates. Photoluminescence (PL), secondary ion mass spectrometry (SIMS), transmission electron microscopy, and X-ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee2c3052fc80c350ae360b427b3868e3
https://doi.org/10.1016/0022-0248(95)00368-1
https://doi.org/10.1016/0022-0248(95)00368-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 13:636-641
Optical emission and absorption properties of Si1−xGex/Si superlattices grown on (100) and (110) Si substrates were investigated to determine the optimal growth conditions for these structures to be used as infrared detectors. Fully strained Si1−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5529d0277a8c413a3841e17e298ac09b
https://doi.org/10.1116/1.579798
https://doi.org/10.1116/1.579798