Zobrazeno 1 - 10
of 50
pro vyhledávání: '"T. L. Aselage"'
Publikováno v:
Journal of Materials Research. 20:3004-3010
Boron sub-arsenide, B12As2, is based on twelve-atom clusters of boron atoms and two-atom As–As chains. By contrast, SiC is a tetrahedrally bonded covalent semiconductor. Despite these fundamental differences, the basal plane hexagonal lattice const
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75976a6df9ac86b361059e75689630ea
https://doi.org/10.1557/jmr.2005.0367
https://doi.org/10.1557/jmr.2005.0367
Publikováno v:
Journal of Low Temperature Physics. 116:133-146
Interest in the critical dynamics of superfluid He in microgravity conditions has motivated the development of new high resolution thermometry technology for use in space experiments near 2K. The current material commonly used as the temperature sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46fee2ecc8ef2a4238586d47e63dfe88
https://doi.org/10.1023/a:1021883011172
https://doi.org/10.1023/a:1021883011172
Publikováno v:
Physical Review Letters. 81:2316-2319
We report measurements of the Seebeck coefficients of boron carbides having compositions B{sub 12+x}C {sub 3{minus}x} , 0.15{lt}x{lt}1.7 , from 6thinsptothinsp900thinspK. These Seebeck coefficients are large, {approx}200 {mu} V/K at 300thinspK, despi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2063b2f8941d632f787e208e75aa7829
https://doi.org/10.1103/physrevlett.81.2316
https://doi.org/10.1103/physrevlett.81.2316
Autor:
T. L. Aselage
Publikováno v:
Journal of Materials Research. 13:1786-1794
The silicon-rich end of the Si-B phase diagram, defining the silicon boride(s) that coexist in equilibrium with boron-saturated silicon, is poorly known. Understanding this equilibrium has implications for the processing of p+ silicon wafers, whose b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13b700b4fa742f91a93c36afe0f35064
https://doi.org/10.1557/jmr.1998.0252
https://doi.org/10.1557/jmr.1998.0252
Autor:
David R. Tallant, T. L. Aselage
Publikováno v:
Physical Review B. 57:2675-2678
The structure of silicon boride, SiB{sub 3}, is based on 12-atom, boron-rich icosahedra in which silicon atoms substitute for some boron atoms. Raman bands associated with vibrations of icosahedral atoms in SiB{sub 3} are quite broad, reflecting this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cba1ed52d889239c1f438d22d44e7afc
https://doi.org/10.1103/physrevb.57.2675
https://doi.org/10.1103/physrevb.57.2675
Publikováno v:
Journal of Materials Research. 12:2825-2854
We review the synthesis methods and properties of single crystal, powder, and thin film TlBaCaCuO high-temperature superconducting (Tl-HTS) materials. With transition temperatures ≥ 100 K for several compounds, Tl-HTS materials present real opportu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae2181b58a495cc1372010d35c2f172
https://doi.org/10.1557/jmr.1997.0378
https://doi.org/10.1557/jmr.1997.0378
Publikováno v:
Physical Review B. 56:3122-3129
The structures of ${\mathrm{B}}_{12}{\mathrm{As}}_{2},$ ${\mathrm{B}}_{12}{\mathrm{P}}_{2},$ ${\mathrm{B}}_{12}{\mathrm{O}}_{2},$ and ${\mathrm{B}}_{12+x}{\mathrm{C}}_{3\ensuremath{-}x}$ $(0.15lxl1.65)$ may each be viewed as composed of ${\mathrm{B}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb7d4862a6c0ae5d1513b2dfdb27cc45
https://doi.org/10.1103/physrevb.56.3122
https://doi.org/10.1103/physrevb.56.3122
Autor:
Joseph R. Michael, T. L. Aselage, Samuel M. Myers, G. A. Petersen, C.H. Seager, Thomas J. Headley
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :291-296
We show that Fe, Co, Cu, and Au impurities in Si are strongly gettered to boron-silicide precipitates formed by supersaturation B implantation and annealing. Effective binding free energies relative to interstitial solution range form somewhat above
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f6a1420ca7b1ad5e1e010faebc83d1
https://doi.org/10.1016/s0168-583x(96)00942-1
https://doi.org/10.1016/s0168-583x(96)00942-1
Publikováno v:
Physical Review B. 53:14450-14457
Using ESR, the spin susceptibilities of a crystal and ceramics of boron carbides have been measured between 4 and 1200 K. A thermally generated contribution to the spin susceptibility, which may be discerned emerging above 100 K, becomes unmistakable
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02141f882d75ffecd5d22e3d3c2b71c6
https://doi.org/10.1103/physrevb.53.14450
https://doi.org/10.1103/physrevb.53.14450
Publikováno v:
Journal of Alloys and Compounds. 226:121-125
Our Rietveld structure refinements of neutron powder diffraction data of boron carbides with 10, 13, 16, and 20 at.% carbon indicate 15–25% vacancies at the central position of the intericosahedral chains. In addition, we find a comparable number o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffb7b36776f002ed60897dcd0dfa81fe
https://doi.org/10.1016/0925-8388(95)01585-x
https://doi.org/10.1016/0925-8388(95)01585-x