Zobrazeno 1 - 10
of 72
pro vyhledávání: '"T. Löher"'
Publikováno v:
Procedia Engineering. 168:452-455
A printed circuit board (PCB)-based platform for potentiometric chemical sensing in liquid media is proposed. The sensors’ general design and specific issues regarding the reference and indicator electrodes are discussed. Initial experimental data
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Publikováno v:
Semiconductor Science and Technology. 15:514-522
The electronic structure of heterojunctions between II-VI semiconductors (CdS, CdTe) and layered transition metal dichalcogenide semiconductors (MoTe2, WSe2) were investigated by soft x-ray photoelectron spectroscopy. The interfaces were formed seque
Publikováno v:
Applied Surface Science. :334-339
The lattice mismatch at the heterostructure CdS/Si(111) is close to 8%. To relieve the structural stress at this interface, an InSe van der Waals-type buffer layer was grown between the Si substrate and the CdS film. After the Si(111) substrate surfa
Publikováno v:
Journal of Applied Physics. 81:7806-7809
The valence band spectra of a vacuum cleaved CuInSe₂ (011) surface were measured with synchrotron radiation at photon energies between 16 and 95 eV. The strong dependence of the photoionization cross section of atomic levels between 28 and 60 eV is
Publikováno v:
Journal of Applied Physics. 80:5718-5722
The II–VI semiconductor CdTe was sequentially deposited onto the (0001) van der Waals surfaces of the layered compound semiconductors MoTe₂ and WSe₂ by molecular beam epitaxy. Growth could only be achieved after deposition of a nucleation layer
Publikováno v:
Surface Science. 366:L685-L688
The adsorption and desorption of water on UHV-cleaved GaAs(110) surfaces was studied using synchrotron-excited photoelectron spectroscopy. Water was adsorbed at T = 100 K. Desorption was studied during heating to room temperature. At low coverages, d
Publikováno v:
Journal of Crystal Growth. 146:408-413
The growth of epitaxial CdS (wurtzite-type) films on the Van der Waals (0001) surface of the layered compound semiconductors WSe2 and MoTe2 is presented. The film and the heterointerfaces are investigated by electron diffraction, photoelectron spectr
Publikováno v:
Journal of Crystal Growth. 146:439-443
Epitaxial films of layered substrates can be prepared onto layered substrates even for large lattice mismatch, when the growth is attempted with the Van der Waals surfaces opposing each other (Van der Waals epitaxy). Thin epitaxial InSe(GaSe) films a
Autor:
H.H. Madden, Th. Fink, S.J. Lombrado, Friedrich Esch, R. Imbihi, Gerhard Ertl, M. Slinko, T. Löher
Publikováno v:
Surface Science. :481-487
The reactions of NO + H 2 and NO + NH 3 on Pt(100) were studied in the 10 −6 mbar range under constant flow conditions between 300–750 K with mass spectrometry, work function measurements, and video LEED. Multiple steady states and kinetic oscill