Zobrazeno 1 - 10
of 74
pro vyhledávání: '"T. Kociniewski"'
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2020, 105, ⟨10.1016/j.microrel.2019.113563⟩
Microelectronics Reliability, Elsevier, 2020, 105, ⟨10.1016/j.microrel.2019.113563⟩
Silicone gel is used in power electronics in order to provide a chemical protection and dielectric insulation in insulated gate bipolar transistor (IGBT) power modules. This gel prevents the direct mapping of surface temperature measurements of the c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::569730e4ee10ac8f447c4b18fa148112
https://doi.org/10.1016/j.microrel.2019.113563
https://doi.org/10.1016/j.microrel.2019.113563
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2014, 55 (3), pp.547-551. ⟨10.1016/j.microrel.2014.12.007⟩
Microelectronics Reliability, Elsevier, 2014, 55 (3), pp.547-551. ⟨10.1016/j.microrel.2014.12.007⟩
It has been demonstrated that high power devices like power diodes and IGBTs (Insulated Gate Bipolar Transistors) could remain functional after cross section. This has opened a field of possibilities for the characterization of distribution of physic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::215b9a0ec2630bf62f6bc758ffa28cd7
https://doi.org/10.1016/j.microrel.2014.12.007
https://doi.org/10.1016/j.microrel.2014.12.007
Publikováno v:
European Journal of Electrical Engineering. 17:363-375
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7646414e06c2880b985c506cc134bf9
https://doi.org/10.3166/ejee.17.363-375
https://doi.org/10.3166/ejee.17.363-375
Publikováno v:
Microelectronics Reliability. 53:1725-1729
A new distributed electro-thermal model has been developed in order to analyze electrical and thermal mappings of power devices during critical operations. The model is based on dividing power device into a vertical multilayer structure, with each la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fd552f158c1371c6e552ab852d2b049
https://doi.org/10.1016/j.microrel.2013.07.089
https://doi.org/10.1016/j.microrel.2013.07.089
Publikováno v:
Applied Surface Science. 258:9228-9232
We have probed the dopant activity of silicon B-doped by Gas Immersion Laser Doping (GILD). Here, we report on the comparison of optical, electrical and structural properties of Si:B, over a wide concentration range, up to 1.5 × 10 21 cm −3 by ste
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca512cdc736dd998882981b803e9bfbc
https://doi.org/10.1016/j.apsusc.2011.10.077
https://doi.org/10.1016/j.apsusc.2011.10.077
Publikováno v:
Thin Solid Films. 518:2542-2545
Pulsed laser induced epitaxy (PLIE), based on melting/solidification processes induced by nanosecond laser pulses, is used to synthesize pseudomorphic Si1 − xGex epilayers from 20 to 80 nm thick Ge layers evaporated on a Si(100) wafer. Ge concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cb2d9e517aedeb60ce8977c107a2c8
https://doi.org/10.1016/j.tsf.2009.09.154
https://doi.org/10.1016/j.tsf.2009.09.154
Autor:
Nada Habka, Zdenek Remes, Dominique Tromson, Christine Mer, Franck Omnès, Julien Barjon, J. Chevallier, François Jomard, T. Kociniewski, Philippe Bergonzo, Milos Nesladek
Publikováno v:
Diamond and Related Materials. 18:827-830
Amplitude Modulated Step Scan Fourier Transform Photocurrent Spectroscopy (AMFTPS) and Dual Beam Photoconductivity are sensitive tools for the measurements of shallow and deep defects related absorption in high resistive semiconductors. Measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::843544d78614d7efc671fee7e3aa5e30
https://doi.org/10.1016/j.diamond.2009.01.008
https://doi.org/10.1016/j.diamond.2009.01.008
Publikováno v:
Physica B: Condensed Matter. :51-56
Diamond rises much research interest because of its high potential for high-temperature, high-power and high-frequency electronic applications. The microwave plasma-assisted chemical vapor deposition (MPCVD) is the most used technique to grow high-pu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769e4eb06c752a3f1cbf05f35d9e458d
https://doi.org/10.1016/j.physb.2007.08.112
https://doi.org/10.1016/j.physb.2007.08.112
Publikováno v:
physica status solidi (a). 204:2965-2970
In n-type diamond doped with phosphorus, exciton properties have been investigated by cathodoluminescence as a function of the phosphorus concentration. A series of homoepitaxial diamond layers were grown by microwave plasma-assisted chemical vapor d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f286eddca499e90db5eb93e53c8777de
https://doi.org/10.1002/pssa.200776324
https://doi.org/10.1002/pssa.200776324
Autor:
C. Saguy, C. Cytermann, J. Chevallier, François Jomard, B. Philosoph, Dominique Ballutaud, Rafi Kalish, T. Kociniewski, C. Baron, Alain Deneuville
Publikováno v:
Diamond and Related Materials. 16:1459-1462
The p-to-n-type conversion of particular B-doped homoepitaxially grown diamond layers upon deuterium plasma treatment was discovered three years ago. However, many questions regarding the reproducibility of the effect for samples of different origins
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a840c7bbd4c33eb3eab326baabdaf8d
https://doi.org/10.1016/j.diamond.2006.12.007
https://doi.org/10.1016/j.diamond.2006.12.007