Zobrazeno 1 - 10
of 146
pro vyhledávání: '"T. Kauerauf"'
Autor:
T. Kauerauf, T. Nigam, B. Min, M. Siddabathula, Germain Bossu, Maria Toledano-Luque, P. Paliwoda, M. Nour
Publikováno v:
IRPS
Standard CMOS reliability has been focused on digital applications and the user profiles associated with these products. However, emerging applications in mobility, automotive, communication networks and data centers require additional, more rigorous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c62195dad78c746d5e9023e7b27aca
https://doi.org/10.1109/irps46558.2021.9405151
https://doi.org/10.1109/irps46558.2021.9405151
Autor:
M. Toledano-Luque, B. Zhu, B. Min, T. Nigam, P. Srinivasan, P. Paliwoda, S. Cimino, Z. Chbili, M. Iqbal Mahmud, A. Gupta, T. Shen, T. Kauerauf
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
The endless demand for high performance and low power CMOS devices at extremely scaled cell dimensions led the semiconductor industry to migrate to FinFET structures. This evolution has brought higher integration complexity and has forced the reliabi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a6f5a0299168bfd30c0e08ab0b1f42
https://doi.org/10.1109/edtm.2019.8731235
https://doi.org/10.1109/edtm.2019.8731235
Autor:
Marc Heyns, Guido Groeseneken, Lars-Ake Ragnarsson, Philippe Roussel, Andriy Hikavyy, Jacopo Franco, T. Kauerauf, Liesbeth Witters, M. Toledano-Luque, Jerome Mitard, Naoto Horiguchi, Geert Hellings, Tibor Grasser, Geert Eneman, Moonju Cho, Ben Kaczer
Publikováno v:
ECS Transactions. 50:177-195
We report extensive experimental results on the Negative Bias Temperature Instability (NBTI) of SiGe channel pMOSFETs as a function of the main gate stack parameters. These results clearly show that this high-mobility channel technology offers a sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e334c8a89876db880f8e4f4b1b6bdd7b
https://doi.org/10.1149/05009.0177ecst
https://doi.org/10.1149/05009.0177ecst
Autor:
Nagarajan Raghavan, Kin Leong Pey, Wenhu Liu, Michel Bosman, Z. Z. Lwin, K. Shubhakar, Yining Chen, T. Kauerauf, Hailang Qin, Xiang Li, Xing Wu
Publikováno v:
Microelectronic Engineering. 88:1365-1372
In this invited paper, we demonstrate how physical analysis techniques that are commonly used in integrated circuits failure analysis can be applied to detect the failure defects associated with ultrathin gate dielectric wear-out and breakdown in [em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1072f6ae6d6a5a9892402c6061481583
https://doi.org/10.1016/j.mee.2011.03.012
https://doi.org/10.1016/j.mee.2011.03.012
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:290-294
In this paper, we examine the time-dependent dielectric breakdown (TDDB) reliability of p-type field-effect transistor devices with 0.7-nm-equivalent-oxide-thickness HfO2 gate dielectric layers. The TDDB distributions indicate ten-year lifetime with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18591b14c6bdd38fa3240f4ef1c855c9
https://doi.org/10.1109/tdmr.2011.2149527
https://doi.org/10.1109/tdmr.2011.2149527
Publikováno v:
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 23:315-323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a98c7b1170917f13842fde2d8444952
https://doi.org/10.1002/jnm.750
https://doi.org/10.1002/jnm.750
Autor:
Stefan Jakschik, R. Degraeve, R. Duschl, Martin Kerber, Y.N. Hwang, Stephan Kudelka, T. Kauerauf, A. Avellan
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 7:310-314
HfSiOx with TiN gate is investigated under substrate injection with respect to stress-induced leakage current (SILC). Most damage caused by electrical stress was found in the high- layer and not in the interface to silicon. Dependent on the applicati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2adfe689e6f2aaa406427584837d881
https://doi.org/10.1109/tdmr.2007.902201
https://doi.org/10.1109/tdmr.2007.902201
Autor:
Annelies Delabie, T. Kauerauf, S. De Gendt, Moonju Cho, G. Pourtois, G. Groeseneken, L.-A. Ragnarsson, Cheol Seong Hwang, M.M. Heyns, Robin Degraeve
Publikováno v:
IEEE Transactions on Electron Devices. 54:752-758
Atomic layer deposition (ALD) with HfCl4 as a precursor is widely used for HfO2 fabrication. Due to the nature of the precursor under study, i.e., HfCl4 and H2O, the presence of chlorine residues in the film due to insufficient hydrolysis is eminent.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333379d94a944bee7ffab2eb951d769c
https://doi.org/10.1109/ted.2007.892024
https://doi.org/10.1109/ted.2007.892024
Publikováno v:
IEEE Transactions on Electron Devices. 52:1759-1765
In this paper, we propose a new methodology for sensing the breakdown location along the channel length with the MOSFET biased in the inversion regime. The usefulness of this technique is demonstrated in the characterization of ultrathin Hf-silicate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3157bfa51c15b310c91750ff5cd87131
https://doi.org/10.1109/ted.2005.852544
https://doi.org/10.1109/ted.2005.852544
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acb89346f9c0afe5f0eec73bba0f2bb7
https://doi.org/10.7567/ssdm.2009.d-4-3
https://doi.org/10.7567/ssdm.2009.d-4-3