Zobrazeno 1 - 10
of 14
pro vyhledávání: '"T. Kasturiarachchi"'
Autor:
X. H. Zhang, S.J. Chung, R.C. Meyer, T. Kasturiarachchi, Y. J. Wang, R. E. Doezema, N. Goel, Giti A. Khodaparast, Michael B. Santos
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 20:386-391
Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6723febb178f5e6ed1d7c27910244122
https://doi.org/10.1016/j.physe.2003.08.042
https://doi.org/10.1016/j.physe.2003.08.042
Autor:
X. Pan, D. Saha, G. D. Sanders, C. J. Stanton, T. Kasturiarachchi, M. Edirisooriya, T. D. Mishima, R. E. Doezema, M. B. Santos, Giti A. Khodaparast, Michael B. Santos, Christopher J. Stanton
Publikováno v:
AIP Conference Proceedings.
We have theoretically and experimentally studied the spin‐dependent Landau levels for electrons and holes in narrow‐gap InSb/AlInSb quantum well systems. We use the envelope function approximation for the electronic and magneto‐optical properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19f054db3f1d3768d1867f9335538f82
https://doi.org/10.1063/1.3671711
https://doi.org/10.1063/1.3671711
Autor:
R. E. Doezema, Tetsuya D. Mishima, Christopher J. Stanton, M. B. Santos, Xingyuan Pan, Gary Sanders, T. Kasturiarachchi, M. Edirisooriya, W. Gempel
Publikováno v:
Springer Proceedings in Physics ISBN: 9781402084249
Magneto-optical measurements of InSb quantum wells show absorption features due to transitions between Landau levels of the conduction and valance subbands. The energies and intensities of the strongest features are well explained by a modified Pidge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a438715c0dc3cbbef5021060a53c31
https://doi.org/10.1007/978-1-4020-8425-6_49
https://doi.org/10.1007/978-1-4020-8425-6_49
Autor:
Tetsuya D. Mishima, M. Edirisooriya, T. Kasturiarachchi, Gary Sanders, D. Saha, Christopher J. Stanton, M. B. Santos, Xingyuan Pan, R. E. Doezema
Publikováno v:
Journal of Applied Physics. 117:213914
We measure the magneto-optical absorption due to intersubband optical transitions between conduction and valence subband Landau levels in InSb square and parabolic quantum wells. InSb has the narrowest band gap (0.24 eV at low temperature) of the III
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a712c07b18eca1199335f62598eb1c6a
https://doi.org/10.1063/1.4921293
https://doi.org/10.1063/1.4921293
Autor:
R.C. Meyer, N. Goel, R. E. Doezema, T. Kasturiarachchi, X. H. Zhang, M. B. Santos, Y. J. Wang, S. J. Chung
Publikováno v:
AIP Conference Proceedings.
We have studied anticrossing behavior due to subband‐Landau‐level coupling in InSb quantum wells. In addition to avoided level crossings for same‐spin levels, we also observed anticrossings of states with opposite spin. This spin‐flip avoided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1761f0ca5f45b0ea04190117a341d37
https://doi.org/10.1063/1.1994157
https://doi.org/10.1063/1.1994157
Autor:
T. Kasturiarachchi, M. B. Santos, R. E. Doezema, Giti A. Khodaparast, S. J. Chung, F. Brown, N. Dai
Publikováno v:
Applied Physics Letters. 88:171901
We use interband exciton transitions in InSb∕AlxIn1−xSb multi-quantum-well samples to determine the heavy-hole and light-hole energy gaps as the strain is varied using Al concentrations up to 25%. The gaps are compared to deformation-dependent ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0481c6f3c6fbc4f24dd07cbf3922e930
https://doi.org/10.1063/1.2198101
https://doi.org/10.1063/1.2198101
Autor:
T. Kasturiarachchi, N. Goel, M. B. Santos, R. E. Doezema, S. J. Chung, F. Brown, Giti A. Khodaparast, N. Dai
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 24:2429
Excitons in semiconductors can be used as a tool to probe various material and structural properties. The authors studied strain-related materials parameters in InSb∕AlxIn1−xSb quantum well structures. By changing the Al concentration in the barr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3897e12cf63e7944331e3d4db20d6c71
https://doi.org/10.1116/1.2348885
https://doi.org/10.1116/1.2348885
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