Zobrazeno 1 - 10
of 58
pro vyhledávání: '"T. Kampschulte"'
Publikováno v:
New Journal of Physics, Vol 17, Iss 4, p 043044 (2015)
We propose and investigate a hybrid optomechanical system consisting of a micro-mechanical oscillator coupled to the internal states of a distant ensemble of atoms. The interaction between the systems is mediated by a light field which allows the cou
Externí odkaz:
https://doaj.org/article/92ad843e4a034da09db8fd4352a71a0d
Autor:
T. Kampschulte, M.Ch. Lux-Steiner, Wolfgang Harneit, J. Albert, Ulrich Fiedeler, S. Schuler, S. Siebentritt, A Gerhard, S. Brehme, A. Bauknecht
Publikováno v:
Solar Energy Materials and Solar Cells. 67:129-136
Metal organic vapor-phase epitaxy (MOVPE) is used to prepare epitaxial reference films and solar cells based on CuGaSe 2 . Room temperature Hall measurements are performed on epitaxial CuGaSe 2 . Conductivities up to 0.7 (Ω cm) −1 were obtained. H
Autor:
Michael Heuken, J. Albert, W. Taudt, A. Bauknecht, M. Saad, T. Kampschulte, Holger Kalisch, J. Söllner, H. Hamadeh, Ulf Blieske, M. Deschler, Holger Jürgensen, M.Ch. Lux-Steiner
Publikováno v:
Journal of Crystal Growth. :158-162
The growth of II–VI semiconductors is performed in MOCVD systems (AIX 200 and AIX 200/4) with a capacity of one 2 in and one 4 in wafer or equivalent, respectively, on 2 in substrates. The growth of ZnSe, ZnSSe and ZnMgSSe has been carried out with
Autor:
Ulf Blieske, V. Dieterle, Sebastian Fiechter, Dimitrios Hariskos, D. Braunger, Arnulf Jäger-Waldau, I. Hengel, H.W. Schock, Klaus Ellmer, Joachim Klaer, M. Ruckh, R. Klenk, T. Kampschulte, M.Ch. Lux-Steiner, Ch. Kaufmann
Publikováno v:
Solar Energy Materials and Solar Cells. 49:349-356
CuInS2 thin films were prepared by sulfurization of sequentially deposited CuIn stacks with elemental sulfur. Precursors as well as reacted films are characterized by scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX) and X-ra
Publikováno v:
Surface Science. :949-953
We have measured vicinal surfaces of Si(111) by using high-temperature scanning tunneling microscopy. Above the (7 X 7)/(1 X 1) phase transition temperature T c we observe fluctuating monoatomic steps with uniform separation. Below T c the precipitat
Publikováno v:
Surface Science. :1408-1413
By using high-temperature scanning tunneling microscopy we have measured step fluctuations on highly oriented and vicinal surfaces of Si(111) in the temperature range up to the (7 × 7) (1 × 1) phase transition temperature (1100 K). On mono-layer st
Autor:
H. Sehnert, Wolfram Jaegermann, A. Bauknecht, J. Albert, M.Ch. Lux-Steiner, Andreas Klein, T. Kampschulte, Ulf Blieske
Publikováno v:
Applied Physics Letters. 74:1099-1101
The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (XPS). ZnSe was sequentially grown on CuGaSe₂(001) epilayers. In situ photoemission spectra of the Ga 3d and Zn 3d core levels as well as XPS valenc
Publikováno v:
Zeitschrift für wirtschaftlichen Fabrikbetrieb. 92:50-52
Autor:
A. Bauknecht, T. Kampschulte, M. Saad, Martha Ch. Lux-Steiner, Ulf Blieske, Shigefusa F. Chichibu
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
Autor:
J. Sollner, T. Kampschulte, Ulf Blieske, M.Ch. Lux-Steiner, A. Bauknecht, K. Schatke, Alois Krost, M. Saad
Publikováno v:
Scopus-Elsevier