Zobrazeno 1 - 10
of 55
pro vyhledávání: '"T. Kamejima"'
Autor:
T. Nakamura, Satoru Suzuki, M. Shibata, H. Tosho, D. E. Sykes, K. Sasa, Y. Gao, I. Tachikawa, H. Koyama, T. Adachi, T. Tanigaki, T. Akai, Y. Shimanuki, H. Shichi, Masato Tomita, A. Masamoto, H. Matsunaga, M. Hirano, F. Tohjou, K. Okuno, Y. Yoshioka, T. Obata, M. Maier, H. Takase, K. Sasakawa, S. Matsumoto, Yoshikazu Homma, Satoru Kurosawa, T. Hirano, T. Kamejima, S. Sadayama, A. Ihara
Publikováno v:
Surface and Interface Analysis. 26:144-154
Round-robin studies on relative sensitivity factors (RSFs) in secondary ion mass spectrometry (SIMS) were conducted using bulk GaAs samples uniformly doped with various impurity elements. A total of 31 laboratories participated in two round-robins. M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2208f3be5560cd9a9234b17c16ee367
https://doi.org/10.1002/(sici)1096-9918(199802)26:2<144::aid-sia351>3.0.co
https://doi.org/10.1002/(sici)1096-9918(199802)26:2<144::aid-sia351>3.0.co
Publikováno v:
The 2010 International Power Electronics Conference - ECCE ASIA.
This paper propose a new current control system for IPMSM to reduce harmonic currents caused by the overmoduration and a non-sinusoidal magnetic flux distribution on the rotor. The harmonic currents have problems with making a current control system
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63c54c3e92c81a9cf8fd4d2575355435
https://doi.org/10.1109/ipec.2010.5542098
https://doi.org/10.1109/ipec.2010.5542098
Publikováno v:
IEEE Journal of Quantum Electronics. 15:775-781
Extremely high optical power density emission was achieved with an AlGaAs "window structure" laser in CW operation as well as pulsed operation by increasing the threshold of the catastrophic optical damage (COD) on mirrors. A Zn diffused "window stri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bac3d25aab589d197b216fbd79adb7d
https://doi.org/10.1109/jqe.1979.1070102
https://doi.org/10.1109/jqe.1979.1070102
Publikováno v:
Journal of The Electrochemical Society. 126:664-667
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bda7c9ff07fe596b8d9fc39a3c1352e
https://doi.org/10.1149/1.2129105
https://doi.org/10.1149/1.2129105
Publikováno v:
IEEE Journal of Quantum Electronics. 23:720-724
A new fabrication process has been successfully applied for the first time to the AlGaAs/GaAs laser diode. This new process includes vapor phase etching and subsequent MOVPE regrowth. Self-aligned LD's fabricated by this process have shown sufficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddd3210cc372c31d0f702977fc02be83
https://doi.org/10.1109/jqe.1987.1073412
https://doi.org/10.1109/jqe.1987.1073412
Autor:
T. Kamejima, K. Ishida
Publikováno v:
Journal of Electronic Materials. 8:57-73
Dark spot defects in (GaAl)As-GaAs double heterostructure lasers are studied by transmission electron microscopy and found to be a cluster of dislocations generated in the first (GaAl)As epitaxial layer during epitaxial growth. Burgers vectors and sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c177aea95061da341474094c6918eaa
https://doi.org/10.1007/bf02655641
https://doi.org/10.1007/bf02655641
Publikováno v:
Applied Physics Letters. 36:655-657
Deep levels in (Al,Ga)As double‐heterostructure lasers have been studied by deep‐level transient spectroscopy during accelerated aging at junction temperatures in the 120–320 °C range. A marked correlation has been found between the concentrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df8d966b1d0e914ad94d983aa59bcc1a
https://doi.org/10.1063/1.91614
https://doi.org/10.1063/1.91614
Publikováno v:
Applied Physics Letters. 40:16-17
Lattice defect structure of degraded InGaAsP lasers has been investigated by scanning and transmission electron microscopy. It is found that although dislocation climb motion in InGaAsP lasers is slow, slip dislocations parallel to the stripe cause r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f23360a6801e06c29bdb10c385c024
https://doi.org/10.1063/1.92917
https://doi.org/10.1063/1.92917
Publikováno v:
Physics Letters A. 26:555-556
The polarization of the luminescence from the α-center in KI was observed at 4.2°K, and was interpreted as being due to the dynamical Jahn-Teller effect in the degenerate excited state.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ce22b1a4f61aa6f9c78dadb9219263
https://doi.org/10.1016/0375-9601(68)90544-6
https://doi.org/10.1016/0375-9601(68)90544-6
Publikováno v:
Journal of Applied Physics. 50:5150
Degradation mechanism and the related change in lasing characteristics for a mirror degradation were investigated in AlGaAs double‐heterostructure lasers with uncoated mirror surfaces. In constant optical‐power operation, mirror degradation was c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b52328ecb31fc991520e32a872daa1b9
https://doi.org/10.1063/1.326650
https://doi.org/10.1063/1.326650