Zobrazeno 1 - 10
of 113
pro vyhledávání: '"T. K. Sharma"'
Autor:
S. Haldar, V. K. Dixit, Geetanjali Vashisht, Shailesh Kumar Khamari, S. Porwal, T. K. Sharma, S. M. Oak
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-12 (2017)
Abstract Effect of charge carrier confinement and ultra-low disorder acquainted in AlGaAs/GaAs multi-quantum well system is investigated via Magneto-photoluminescence spectroscopy. Significant increase of effective mass is observed for the confined e
Externí odkaz:
https://doaj.org/article/f0742b7abd594fd68b37ff66ea0dd972
Autor:
S. K. Chetia, P. Rajput, R. S. Ajimsha, R. Singh, A. K. Das, R. Kumar, P. S. Padhi, A. K. Sinha, S. N. Jha, T. K. Sharma, P. Misra
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88824ff88fc31ab798a570c06d9c002
https://doi.org/10.1007/s00339-022-05797-2
https://doi.org/10.1007/s00339-022-05797-2
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e57b8a578ae9fd1b09ec7ecb8d145821
https://doi.org/10.1063/5.0017440
https://doi.org/10.1063/5.0017440
Publikováno v:
Journal of Physics D: Applied Physics. 54:495107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0166d0512653d4308bae4e75c7683be6
https://doi.org/10.1088/1361-6463/ac252d
https://doi.org/10.1088/1361-6463/ac252d
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4ce228ab0c664508389da318519181
https://doi.org/10.1063/1.5113299
https://doi.org/10.1063/1.5113299
Autor:
U. K. Ghosh, A. K. Jaiswal, Geetanjali Vashisht, S. Porwal, T. K. Sharma, S. Haldar, V. K. Dixit, A. Khakha
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
A simple and cost-effective maskless-photolithography system is developed using a digital projector and a stereo-zoom optical microscope. The optical microscope is used to focus a highly divergent light from the projector into a smaller region of spa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184708fd8ee7e72e7cc7da380a8a5adf
https://doi.org/10.1063/1.5113058
https://doi.org/10.1063/1.5113058
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
Photoluminescence (PL) and Photoluminescence Excitation (PLE) measurements are performed on MOVPE grown InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures. Features associated with InAlN barrier layer, InGaN channel layer and G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22e0927ea96d8251f441e43cfe70ce26
https://doi.org/10.1063/1.5113306
https://doi.org/10.1063/1.5113306
Autor:
Shailesh K. Khamari, S. Haldar, V. K. Dixit, T. K. Sharma, R. Roychowdhury, Geetanjali Vashisht, Heena Darji
Publikováno v:
AIP Conference Proceedings.
The effect of surface and interface states of various GaAs based structures such as n+GaAs, n-n+GaAs and p-i-n GaAs are investigated for understanding the detector performance. These structures are grown by metal organic vapor phase epitaxy (MOVPE).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2713d260e1d1f32f74d80140153f1bd
https://doi.org/10.1063/1.5098613
https://doi.org/10.1063/1.5098613