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Autor:
N. V. Monchares, Yu. N. Sveshnikov, Yu.N. Rakov, A. F. Zazulnikov, T. K. Bondareva, L. V. Schepina, G. F. Uzelmann, T. P. Bobrova, Yu. B. Mjakishev
Publikováno v:
2010 20th International Crimean Conference "Microwave & Telecommunication Technology".
The heterostructures AlGaN/AlN/GaN, grown on sapphire substrates, the standard design of the integrated power HFET and the design with the additional field-plate, and its technology have been developed. The HFETs have given output power 4,5–5,5 and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f315abc68178553a19d7916b75e5cb14
https://doi.org/10.1109/crmico.2010.5632774
https://doi.org/10.1109/crmico.2010.5632774
