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Autor: P. Brinkman, M. A. van de Pol, M. G. Gerritsen, L. D. Bos, T. Dekker, B. S. Smids, A. Sinha, C. J. Majoor, M. M. Sneeboer, H. H. Knobel, T. J. Vink, F. H. de Jongh, R. Lutter, P. J. Sterk, N. Fens

Publikováno v: Clinical & Experimental Allergy. 47:i-i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfa83935512a5d5259b8dfd893f9928b
https://doi.org/10.1111/cea.13018

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The active dopant concentration in ion implanted indium tin oxide thin films

Autor: T. J. Vink, M. H. F. Overwijk, W. Walrave

Publikováno v: Journal of Applied Physics. 80:3734-3738

The effect of oxygen ion implantation on the electrical and optical properties of Sn‐doped In2O3 (ITO) thin films, sputter deposited from a planar magnetron source on glass substrates, is described. The films were characterized as a function of the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::82d4c13fc3b52169bd983c34290cc8a4
https://doi.org/10.1063/1.363324

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CsI: a high effective gamma coating for plasma display panels

Autor: R. G. F. A. Verbeek, P.K. Bachmann, T. J. Vink, V. van Elsbergen

Publikováno v: Applied Physics Letters. 83:2285-2287

Reduction of the breakdown voltage in plasma panel discharge cells calls for electrode coatings with a high secondary-electron emission yield. MgO is most widely used in this field because of its high secondary-electron yield, which is primarily gove

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ff23ab01097c4e4a3e53c73a3f590b62
https://doi.org/10.1063/1.1611645

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Tidal breathing FeNO measurements: a new algorithm

Autor: Esther, van Mastrigt, Ruben C A, de Groot, Hans W, van Kesteren, Anton T J, Vink, Johan C, de Jongste, Mariëlle W H, Pijnenburg

Publikováno v: Pediatric pulmonology. 49(1)

International guidelines recommend measuring fractional exhaled nitric oxide (FeNO) during a single slow exhalation with a constant flow of 50 ml/sec. We developed a new algorithm to compute FeNO at 50 ml/sec from tidal breathing measurements. The ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::ad7b17ae46f7e26cde67d4f35ce30383
https://pubmed.ncbi.nlm.nih.gov/23401372

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On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. II. Reverse‐bias current mechanism

Autor: K. J. B. M. Nieuwesteeg, T. J. Vink, M. van der Veen, J. M. Shannon

Publikováno v: Journal of Applied Physics. 74:2581-2589

The physical mechanisms that determine the current transport in reverse‐biased Schottky diodes on undoped ‘‘device‐grade’’ hydrogenated amorphous silicon (a‐Si:H) are elucidated. The current‐voltage (J‐V) curves for several Schottky

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0223e23ac6b4dcc9f075c1b795125679
https://doi.org/10.1063/1.354671

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On the current mechanism in reverse‐biased amorphous‐silicon Schottky contacts. I. Zero bias barrier heights and current transport mechanism

Autor: T. J. Vink, K. J. B. M. Nieuwesteeg, M. van der Veen

Publikováno v: Journal of Applied Physics. 74:2572-2580

A study of the zero‐bias barrier heights of hydrogenated amorphous‐silicon‐based Schottky diodes and the prevailing current transport mechanisms in these structures is made using electrical and electro‐optical techniques. Several series of de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::298817339caee09e8ce7b9e246a5f015
https://doi.org/10.1063/1.354670

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