Zobrazeno 1 - 6
of 6
pro vyhledávání: '"T. J. Tredwell"'
Autor:
T. J. Tredwell, R. Mruthyunjaya, Jung-Su Choi, Jin Jang, C. Kosik-Williams, Mallory Mativenga, Won Jae Choi, Min Hyuk Choi, Eric J. Mozdy
Publikováno v:
Journal of The Electrochemical Society. 158:J169-J174
Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a76c097711ba75f648637039a97d9752
https://doi.org/10.1149/1.3573769
https://doi.org/10.1149/1.3573769
Autor:
Seung Hyun Park, Won Jae Choi, Eric J. Mozdy, Jae Won Choi, Carlo Kosik Williams, T. J. Tredwell, Mallory Mativenga, Jin Jang, Min Hyuk Choi, R. Mruthyunjaya
Publikováno v:
Electrochemical and Solid-State Letters. 14:J1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17eb9838fc21423bb2a6e7f9b1a08d68
https://doi.org/10.1149/1.3507302
https://doi.org/10.1149/1.3507302
Autor:
E. H. Jacobsen, T. J. Tredwell
Publikováno v:
Physical Review Letters. 35:244-247
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41b4d11143d518e456b337ef168bf621
https://doi.org/10.1103/physrevlett.35.244
https://doi.org/10.1103/physrevlett.35.244
Autor:
E. H. Jacobsen, T. J. Tredwell
Publikováno v:
Physical Review B. 13:2931-2942
We have observed large increases in the critical current of Josephson junctions under 10-GHz phonon excitation. Eliashberg has predicted that absorption of microwaves in a superconducting film will increase the energy gap by creating a nonthermal qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bfbf53cd9861c82e459eb8aacc94e43
https://doi.org/10.1103/physrevb.13.2931
https://doi.org/10.1103/physrevb.13.2931
Autor:
T. J. Tredwell, C. R. Viswanathan
Publikováno v:
Applied Physics Letters. 36:462-464
A modification of the deep‐level transient spectroscopy (DLTS) technique for determination of interface‐state parameters is described. In this technique, the surface potential dependence of the interface‐state emission signal in a MOS capacitor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c02aad3814e27b93eb50aa4d716363
https://doi.org/10.1063/1.91507
https://doi.org/10.1063/1.91507
Publikováno v:
Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47daba3de6420992b0f01d7e919761c
https://doi.org/10.7567/ssdm.1984.b-7-2
https://doi.org/10.7567/ssdm.1984.b-7-2