Zobrazeno 1 - 10
of 11
pro vyhledávání: '"T. J. Roth"'
Publikováno v:
Optical Society of America Annual Meeting.
Resonant-optical-waveguide (ROW) arrays are monolithic devices capable of radiating in a diffraction-limited beam to high output power levels. These devices are attractive for many applications because they are one wire devices with no active phase c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7db3bdb5a9e51c48e4933133384b9780
https://doi.org/10.1364/oam.1991.ws3
https://doi.org/10.1364/oam.1991.ws3
Publikováno v:
Optical Society of America Annual Meeting.
Phase-locked arrays of antiguides (negative-index guides) have demonstrated the unique ability to operate in phase with diffraction-limited beams to high pulsed and cw output powers. These types of sources are desirable for many applications, such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1309c88e56b41d50be5d3bd5b40626b3
https://doi.org/10.1364/oam.1990.mk2
https://doi.org/10.1364/oam.1990.mk2
Publikováno v:
Journal of Applied Physics. 56:1707-1716
Band‐gap and lattice constant data are presented characterizing the transient composition that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This compositional inhomogeneity, a region of significantly differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90929cbbbe58ee1a2291d2215f2626f9
https://doi.org/10.1063/1.334161
https://doi.org/10.1063/1.334161
Publikováno v:
Journal of Electronic Materials. 12:433-457
Residual donors and acceptors in epitaxial films of GaAs and InP grown by the hydride vapor phase epitaxy technique were investigated using the complementary techniques of photothermal ionization spectroscopy and variabletemperature photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e83967eb8074f4e31ad47ffd0281d70c
https://doi.org/10.1007/bf02651142
https://doi.org/10.1007/bf02651142
Autor:
T. R. Lepkowski, G. E. Stillman, B. J. Skromme, T. J. Roth, S. S. Bose, J. A. Aguilar, N. C. Tien, Byeongdu Lee, K. Arai
Publikováno v:
Journal of Applied Physics. 66:3772-3786
The incorporation of residual shallow impurity species, in particular Si, in both chloride and hydride vapor‐phase epitaxial GaAs layers grown with oxygen intentionally injected into the source zone has been studied. Photothermal ionization spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1065c768d00549aa9a1b92e4e67b5833
https://doi.org/10.1063/1.344040
https://doi.org/10.1063/1.344040
Publikováno v:
Applied Physics Letters. 40:513-515
Electron drift velocities in (100) GaAs have been measured at various temperatures from 95 to 385 K for electric field strengths from about 15 to 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K using a microwave time‐of‐flight te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f6e28afbed599f05753a5020b2aa0b
https://doi.org/10.1063/1.93161
https://doi.org/10.1063/1.93161
Publikováno v:
Applied Physics Letters. 43:373-375
Precision x‐ray measurements have been performed on the compositional inhomogeneity that occurs during the initial part of the liquid phase epitaxial (LPE) growth of InGaPAs on InP substrates from step‐cooled solutions. Double crystal x‐ray dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49329580d221758983e39f426862c7bc
https://doi.org/10.1063/1.94342
https://doi.org/10.1063/1.94342
Publikováno v:
Journal of Crystal Growth. 66:484-486
It is shown that the InGaAsP quaternary grown by constant temperature liquid phase epitaxy on InP substrates can, under special conditions of growth solution supersaturation and epitaxial layer mismatch, exhibit considerably narrower rocking curve ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dbcdd413f0a5a4050cc0a6b4671dd1
https://doi.org/10.1016/0022-0248(84)90237-9
https://doi.org/10.1016/0022-0248(84)90237-9
Publikováno v:
Semiconductor Growth Technology.
Over the past decade indium phosphide has become one of the most intensively studied semiconducting materials. A high saturation velocity and large peak to valley ratio in its velocity field characteristic make it an attractive alternative for many h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a69a26234d39d48f73356020c199ba
https://doi.org/10.1117/12.934273
https://doi.org/10.1117/12.934273
Publikováno v:
The Physics of Submicron Structures ISBN: 9781461297147
The static electron velocity-field characteristics for n type GaAs, InP, In0.53Ga0.47As, and In0.8Ga0.44P0.56 have been measured using a microwave time-of-flight technique. Drift velocities were measured at temperatures from 95 K to 400 K over a rang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb94af9b0de7e8cb7d3af744c860802
https://doi.org/10.1007/978-1-4613-2777-6_27
https://doi.org/10.1007/978-1-4613-2777-6_27
