Zobrazeno 1 - 9
of 9
pro vyhledávání: '"T. J. O'Hanlon"'
We have performed cross-sectional scanning capacitance microscopy (SCM), cathodoluminescence (CL) microscopy in the scanning electron microscope (SEM) and transmission electron microscopy (TEM) all on the same few-micron region of a GaN/sapphire samp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed1b28169e0f4f1c16c1c02246eb632c
https://www.repository.cam.ac.uk/handle/1810/318750
https://www.repository.cam.ac.uk/handle/1810/318750
Publikováno v:
Ultramicroscopy. 231:113255
Directly correlated measurements of the surface morphology, light emission and subsurface structure and composition were carried out on the exact same nanoscale trench defects in InGaN quantum well (QW) structures. Multiple scanning probe, scanning e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23ced6dc64b72f7375f9bb8763c268ad
https://doi.org/10.1016/j.ultramic.2021.113255
https://doi.org/10.1016/j.ultramic.2021.113255
Autor:
Colin J. Humphreys, Fabien Massabuau, Matthew Horton, Sneha Rhode, Marcin Zielinski, András Kovács, T. J. O'Hanlon, Rachel A. Oliver, Menno J. Kappers, Rafal E. Dunin-Borkowski
Publikováno v:
Nano Letters. 17:4846-4852
We conducted a comprehensive investigation of dislocations in Al$_{0.46}$Ga$_{0.54}$N. Using aberration-corrected scanning transmission electron microscopy and energy dispersive X-ray spectroscopy, the atomic structure and atom distribution at the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d47fb92faa57022182e1db5b30002d49
https://doi.org/10.1021/acs.nanolett.7b01697
https://doi.org/10.1021/acs.nanolett.7b01697
Publikováno v:
Ultramicroscopy. 212
We describe the use of a cross-shaped platinum marker deposited using electron-beam-induced deposition (EBID) in a focused ion beam – scanning electron microscope (FIB-SEM) system to facilitate site-specific preparation of a TEM foil containing a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1953607859e344f60da01a8573b85d8
https://pubmed.ncbi.nlm.nih.gov/32114315
https://pubmed.ncbi.nlm.nih.gov/32114315
Autor:
Colin J. Humphreys, T. J. O'Hanlon, Marcin Zielinski, Fabien Massabuau, András Kovács, Rafal E. Dunin-Borkowski, Menno J. Kappers, Matthew Horton, Sneha Rhode, Rachel A. Oliver
[Abstract not available]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e791463f95f6493d40f7853c9e8c6b7
https://strathprints.strath.ac.uk/79474/1/Humphreys_etal_MM_2018_Atomic_resolution_imaging_of_dislocations_in_algan_and_the_efficiency_of_UV_LEDs.pdf
https://strathprints.strath.ac.uk/79474/1/Humphreys_etal_MM_2018_Atomic_resolution_imaging_of_dislocations_in_algan_and_the_efficiency_of_UV_LEDs.pdf
Autor:
Marcin Zielinski, András Kovács, Matthew Horton, Sneha Rhode, Colin J. Humphreys, T. J. O'Hanlon, Menno J. Kappers, Fc-P Massabuau, Peiyu Chen, Rafal E. Dunin-Borkowski, Rachel A. Oliver
Publikováno v:
Proceedings Volume 10532, Gallium Nitride Materials and Devices XIII
We investigated alloy fluctuations at dislocations in III-Nitride alloys (InGaN and AlGaN). We found that in both alloys, atom segregation (In segregation in InGaN and Ga segregation in AlGaN) occurs in the tensile part of dislocations with an edge c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::23c2c3f2f52f9ec4ec0dc4bfefa00ab9
https://strathprints.strath.ac.uk/79473/1/Massabuau_etal_SPIE_OPTO_2018_Alloy_fluctuations_at_dislocations_in_III_nitrides_dentification.pdf
https://strathprints.strath.ac.uk/79473/1/Massabuau_etal_SPIE_OPTO_2018_Alloy_fluctuations_at_dislocations_in_III_nitrides_dentification.pdf
Autor:
T. J. O'Hanlon, Helen Springbett, Christopher X. Ren, S.-L. Sahonta, Rachel A. Oliver, Jonathan S. Barnard, Tongtong Zhu, James T. Griffiths
Publikováno v:
physica status solidi (b). 253:840-844
Droplets grown by modified droplet epitaxy on non-polar (11-20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring-like structures. This work discusses droplet etching as a possible mechanism for ring formation, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b27d600b1ea921d9f2a7340f4a78aa9
https://doi.org/10.1002/pssb.201552633
https://doi.org/10.1002/pssb.201552633
Autor:
Menno J. Kappers, Peiyu Chen, Matthew Horton, F.C-P. Massabuau, Sneha Rhode, T. J. O'Hanlon, Rafal E. Dunin-Borkowski, Christopher X. Ren, Rachel A. Oliver, András Kovács, Colin J. Humphreys
We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f84e0b674139f50a177dedaa54d8d0b9
Autor:
James T. Griffiths, Jonathan S. Barnard, S.-L. Sahonta, T. J. O'Hanlon, Helen Springbett, Rachel A. Oliver, Christopher X. Ren, Tongtong Zhu
Publikováno v:
physica status solidi (b). 253:793-793
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055204347a9539530112b97fa118faf3
https://doi.org/10.1002/pssb.201670530
https://doi.org/10.1002/pssb.201670530