Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. J. Morthorst"'
Publikováno v:
Journal of Applied Physics. 76:2872-2880
Using electron‐spin resonance (ESR), we demonstrate that several E’ variant precursors exist in a variety of technologically significant thermally grown thin SiO2 films on Si. The E’ variants include two varieties with the ubiquitous Eγ’ lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::201069bd2f8e6def87cc12294ebf04cb
https://doi.org/10.1063/1.358428
https://doi.org/10.1063/1.358428
Publikováno v:
Journal of Applied Physics. 76:8186-8188
Using electron spin resonance (ESR), a new electrically active point defect in thermally grown SiO2 films on Si has been detected. The defect has a large capture cross section for electrons when it is paramagnetic and holes when it is diamagnetic (ES
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bcfe5dbdda0c50ef1c6a29286f83a83
https://doi.org/10.1063/1.357871
https://doi.org/10.1063/1.357871
Publikováno v:
Applied Physics Letters. 65:2281-2283
We demonstrate that at least two varieties of E’ defect precursors exist in a wide variety of conventionally processed thermal SiO2 thin films. We provisionally label the defects EP and E’γp. We find that EP defect capture cross sections exceed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a36590cd2b27456298bd055d813a36
https://doi.org/10.1063/1.112718
https://doi.org/10.1063/1.112718
Publikováno v:
MRS Proceedings. 338
We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50ec70c7b2833839681291dc4bce6446
https://doi.org/10.1557/proc-338-37
https://doi.org/10.1557/proc-338-37