Zobrazeno 1 - 6
of 6
pro vyhledávání: '"T. J. Leedham"'
Autor:
Xiaojie Lou, Finlay D. Morrison, James F. Scott, Ming Zhang, M. Miyake, Osamu Tsuji, T. J. Leedham, Toshiaki Tatsuta
Publikováno v:
Integrated Ferroelectrics. 74:165-172
We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c87f3527fdc2074370ff739711398b8
https://doi.org/10.1080/10584580500414176
https://doi.org/10.1080/10584580500414176
Autor:
S. Ríos, M. Miyake, Ming Zhang, Xiaojie Lou, James F. Scott, Finlay D. Morrison, Pavlo Zubko, V. M. Kugler, T. J. Leedham, T. Tatsuta, O. Tsuji
Publikováno v:
Journal of the American Ceramic Society. 88:1691-1701
A review is given of ceramic and single-crystal thin film ferroelectric oxides, emphasizing perovskite phases, together with some new developments on hafnia films. It is shown that single-crystal barium titanate films behave as bulk down to at least
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03267a9883018ee317728f2f8dc85d03
https://doi.org/10.1111/j.1551-2916.2005.00486.x
https://doi.org/10.1111/j.1551-2916.2005.00486.x
Autor:
A. R. Teren, Peter Ehrhart, Jiaqing He, Chun-Lin Jia, P. K. Baumann, S. R. Rushworth, M. Schumacher, T. J. Leedham, Rainer Waser, Anthony C. Jones, J. Lindner
Publikováno v:
Integrated Ferroelectrics. 57:1163-1173
Hafnium oxide films were deposited on Si (100) substrates using metal-organic chemical vapor deposition (MOCVD) and evaluated for gate dielectric applications. For this study, two types of precursors were tested: an oxygenated one, Hf butoxide-mmp, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db9ac7cc902d7481a890fc1bc5651960
https://doi.org/10.1080/714040772
https://doi.org/10.1080/714040772
Autor:
A. R. Teren, P. Ehrhart, R. Waser, J. Q. He, C. L. Jia, M. Schumacher, J. Lindner, P. K. Baumann, T. J. Leedham, S. R. Rushworth, A. C. Jones
Publikováno v:
Integrated Ferroelectrics. 57:1163-1173
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50578ef8f25f42c040e2a76846a31bf9
https://doi.org/10.1080/10584580390259579
https://doi.org/10.1080/10584580390259579
Autor:
T. J. Leedham, Toshiaki Tatsuta, James F. Scott, Finlay D. Morrison, Marin Alexe, Osamu Tsuji
Publikováno v:
Microelectronic Engineering. 66:591-599
We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory appl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76b603554584f94b4bd0c98b0a2d78c
https://doi.org/10.1016/s0167-9317(02)00970-x
https://doi.org/10.1016/s0167-9317(02)00970-x
Autor:
T. J. Leedham
Publikováno v:
Integrated Ferroelectrics. 92:40-42
The strategy for synthesising a precursor solution for Misted Chemical Deposition of strontium bismuth tantalate is described and the importance of attention to detail is illustrated. With a view towards eventual commercial exploitation, emphasis is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11fc6ac30807e6bc9cae14b9081e4d56
https://doi.org/10.1080/10584580701746749
https://doi.org/10.1080/10584580701746749