Zobrazeno 1 - 10
of 468
pro vyhledávání: '"T. J. King Liu"'
Autor:
H.-S. P. Wong, K. Akarvardar, D. Antoniadis, J. Bokor, C. Hu, T.-J. King-Liu, S. Mitra, J.D. Plummer, S. Salahuddin, L. Deng, G. Li, S. Han, L. Shi, Y. Xie, E. Yaacoub, M.-S. Alouini, A. Douik, H. Dahrouj, T.Y. Al-Naffouri
Publikováno v:
Proceedings of the IEEE. 108:483-484
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6fe475b84041621a3a016bfc550393b
https://doi.org/10.1109/jproc.2020.2979196
https://doi.org/10.1109/jproc.2020.2979196
Autor:
M. Vinet, Louis Hutin, Giulia Usai, Thomas Ernst, J. L. Munoz-Gamarra, T. J. King Liu, Urmita Sikder
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
This work provides guidelines aiming at obtaining a functional, non-volatile and reprogrammable NEM relay design for ultra-low power hybrid NEMS/CMOS circuits addressing various non-volatile memory applications operating at a fixed supply voltage Vdd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d26f0d8109a5c8f592651ac5163011bc
https://doi.org/10.1109/s3s.2017.8309215
https://doi.org/10.1109/s3s.2017.8309215
Publikováno v:
14th IEEE International Conference on Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f1322ac2280d810349e7de6963c934e
https://doi.org/10.1109/nano.2014.6968045
https://doi.org/10.1109/nano.2014.6968045
Autor:
N.W. Cody, A. Yiptong, Xiangyang Huang, Robert J. Mears, M. Hytha, R.J. Stephenson, T.-J. King-Liu, Hideki Takeuchi, Nuo Xu, Nattapol Damrongplasit
Publikováno v:
2012 IEEE Silicon Nanoelectronics Workshop (SNW).
We demonstrate simultaneous NMOS and PMOS high-field mobility enhancement and variability reduction by inserting partial monolayers of oxygen during silicon epitaxy of the channel layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df1bfbf77f242884d13ad10c56ff4766
https://doi.org/10.1109/snw.2012.6243326
https://doi.org/10.1109/snw.2012.6243326
Publikováno v:
2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS).
A low-thermal-budget (CMOS-compatible) process for microshell encapsulation of MEMS devices is proposed. Inkjet-printing of silver (Ag) nanoparticle ink is demonstrated to form porous microshells through which sacrificial oxide (SiO2) can be selectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::637e24898a01ff63b5686ff52f74b9ea
https://doi.org/10.1109/memsys.2012.6170208
https://doi.org/10.1109/memsys.2012.6170208
Autor:
T. J. King Liu
Publikováno v:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa770dd45dac408783e953ac77c9aee8
https://doi.org/10.7567/ssdm.2011.pl-2-2
https://doi.org/10.7567/ssdm.2011.pl-2-2
Autor:
T. J. King Liu, Sung Hwan Kim
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66ed5687e74d28d14a94b3cee52ffc9c
https://doi.org/10.7567/ssdm.2010.c-3-1
https://doi.org/10.7567/ssdm.2010.c-3-1
Autor:
Andrew R. Neureuther, Lynn T.-N. Wang, Nuo Xu, Seng Oon Toh, T.-J. King Liu, Borivoje Nikolic
Publikováno v:
CICC
Parameter-specific ring oscillator (RO) experimental results are reported, demonstrating the ability to electronically distinguish and quantify sources of variations from gate lithography focus, gate-to-active overlay, nitride contact etch stop layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0952fc05a67bfaaa3deead5857e6f9ee
https://doi.org/10.1109/cicc.2010.5617624
https://doi.org/10.1109/cicc.2010.5617624
Autor:
Chung Fu Chang, C. H. Tsai, Y. M. Tseng, R. M. Huang, T.-J. King Liu, P. W. Liu, Changhwan Shin, R. Liao, S. H. Tsai, C. T. Tsai, C. W. Liang, Borivoje Nikolic
Publikováno v:
Proceedings of 2010 International Symposium on VLSI Technology, System and Application.
Tri-gate bulk MOSFETs are realized using a simple shallow-trench-isolation (STI) oxide recess approach. The tri-gate structure together with a retrograde body doping profile provides for superior electrostatic integrity, particularly for narrow fin w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c11611f9e1252609bb61b22d630913a
https://doi.org/10.1109/vtsa.2010.5488926
https://doi.org/10.1109/vtsa.2010.5488926
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.