Zobrazeno 1 - 10
of 14
pro vyhledávání: '"T. J. Faith"'
Publikováno v:
Journal of Vacuum Science and Technology. 19:709-716
Methods for detecting increases in oxygen concentration in aluminum‐based integrated‐circuit (IC) metallizations through increases in monitor‐film resistivity have been developed. Since the resistivity of the IC film is itself not sensitive to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1399bc83733e884f0cc0ccf22d120c1e
https://doi.org/10.1116/1.571091
https://doi.org/10.1116/1.571091
Publikováno v:
Journal of The Electrochemical Society. 134:665-668
Les nettoyages in situ a l'aide de plasmas reagissant de CF 4 et de plasmas de pulverisation par Ar sont compares au nettoyage par plongee dans HF dilue des contacts Al 1% Si/Si n + de dimensions (1 μm) 2 a (3 μm) 2 . Le traitement par CF 4 sous pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359d4a7c9c5224212a163c38a8eb499f
https://doi.org/10.1149/1.2100528
https://doi.org/10.1149/1.2100528
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 1:443-448
Prealloy and postalloy contact resistances at [(Al–Si)/bulk (100)Si] interfaces have been measured for a range of Al–Si alloy compositions (0–2 at.% Si), alloying temperatures (325–550 °C), and contact sizes (3–5 μm). Contact doping for n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99075fd17d2eea86c6e0d83f8f93dc8d
https://doi.org/10.1116/1.571943
https://doi.org/10.1116/1.571943
Autor:
T. J. Faith
Publikováno v:
Journal of Applied Physics. 52:4630-4639
Hillocks which grow on aluminum integrated‐circuit films during the contact alloying process present processing and reliablity problems. Layered Al/Al‐O films, deposited by periodically introducing controlled amounts of oxygen into the aluminum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c89420d1d2a0add7a268a1ea38dfd8
https://doi.org/10.1063/1.329343
https://doi.org/10.1063/1.329343
Publikováno v:
IEEE Transactions on Nuclear Science. 15:61-68
Room temperature recovery kinetics of lithium-containing p/n silicon diodes and solar-cells were experimentally investigated after irradiation by 1 MeV electrons to fluences of 1013 and 1014 e/cm2. The current physical model for the recovery process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02bf6342a985c5d2d6f2621891e3d79e
https://doi.org/10.1109/tns.1968.4325032
https://doi.org/10.1109/tns.1968.4325032
Autor:
T. J. Faith
Publikováno v:
IEEE Transactions on Nuclear Science. 18:371-377
Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74d5261bff3c952d744a41542016492e
https://doi.org/10.1109/tns.1971.4326456
https://doi.org/10.1109/tns.1971.4326456
Autor:
T. J. Faith
Publikováno v:
IEEE Transactions on Nuclear Science. 20:238-242
Measurements of light-generated current versus cell temperature on electron-irradiated n/p silicon solar cells show the temperature coefficient of this current to increase with increasing fluence for both 10?-cm and 2?-cm cells. A relationship betwee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aabf9cb45f9e46c54c1868c69ad11f26
https://doi.org/10.1109/tns.1973.4327401
https://doi.org/10.1109/tns.1973.4327401
Autor:
T. J. Faith
Publikováno v:
IEEE Transactions on Nuclear Science. 19:371-374
Empirical relations between post-irradiation photo-voltaic parameters and lithium-donor density gradient have been derived for crucible-grown lithium-containing solar cells irradiated by i MeV electrons to fluences from 3 × 1013 to 3 × 1015e/cm2. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853aa57e2b6de0ff766f45b3a1f2b27c
https://doi.org/10.1109/tns.1972.4326860
https://doi.org/10.1109/tns.1972.4326860
Autor:
C. P. Wu, T. J. Faith
Publikováno v:
Applied Physics Letters. 45:470-472
Alloying of Al‐1% Si integrated‐circuit metallization by 5‐s heat pulses at temperatures ranging from 490 to 540 °C was compared to standard 30‐min furnace alloying at 425 °C. Hillocks were present on all furnace‐alloyed samples, but were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50c7f3471de558da860094299756e831
https://doi.org/10.1063/1.95219
https://doi.org/10.1063/1.95219
Autor:
T. J. Faith
Publikováno v:
1975 EIC 12th Electrical/Electronics Insulation Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937943faeafb5b25bd27393d4efaba05
https://doi.org/10.1109/eic.1975.7458496
https://doi.org/10.1109/eic.1975.7458496