Zobrazeno 1 - 6
of 6
pro vyhledávání: '"T. J. Eijkemans"'
Autor:
T. J. Eijkemans, L. J. M. Selen, M.J.A. de Voigt, L.J. van IJzendoorn, F.J.J. Janssen, P.J.M. Smulders, M. J. J. Theunissen
Publikováno v:
Journal of Applied Physics, 90(9), 4741-4747. AMER INST PHYSICS
Journal of Applied Physics, 90(9), 4741-4747. American Institute of Physics
Journal of Applied Physics, 90(9), 4741-4747. American Institute of Physics
We have measured axially channeled Rutherford backscattering spectra of Si1-xGex nanofilms in silicon(001). A step in the yield of the host crystal was found for off-normal axes at the depth of the nanofilm. The step was measured as a function of the
Publikováno v:
Materials Science and Technology. 11:41-45
Publikováno v:
Materials Science and Technology. 11:41-45
The effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures has been investigated, using low temperature Hall, Shubnikov–de Haas, and pho
Publikováno v:
Journal of Applied Physics. 74:6242-6246
We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. We use low temperature Hall, Shubnikov–de Haas, and photolumi
Autor:
T. J. Eijkemans, M.J.A. de Voigt, M. J. J. Theunissen, L.J. van IJzendoorn, F.J.J. Janssen, P.J.M. Smulders, L. J. M. Selen
Publikováno v:
Journal of Applied Physics. 91(8)
Autor:
R. H. Braspenning, W. De Raedt, Gustaaf Borghs, M. Van Rossum, C. Van Hoof, C. M. van Es, M. Van Hove, R. Pereira, JH Joachim Wolter, T. J. Eijkemans
Publikováno v:
MRS Proceedings. 240
The damage introduced by CH4/H2 reactive ion etching (RIE) and its recovery after thermal annealing has been investigated by Hall measurements and low temperature photoluminescence (PL) on pseudomorphic AlGaAs/InGaAs modulation doped structures. Afte