Zobrazeno 1 - 10
of 127
pro vyhledávání: '"T. J. Drummond"'
Publikováno v:
Journal of Electronic Materials. 28:1466-1470
Degenerately doped n-type GaAs produces band-to-band luminescence with the peak energy dependent on the carrier concentration. In this study the photoluminescence of Si-doped GaAs is examined after implantation with high energy Be ions and annealing.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0336b1dc3f5c0e3d33a1caea71990de9
https://doi.org/10.1007/s11664-999-0143-6
https://doi.org/10.1007/s11664-999-0143-6
Autor:
T. J. Drummond
Publikováno v:
Physical Review B. 59:8182-8194
Schottky barrier heights on {ital n}-type GaAs can be made to vary from 0.30 to 1.20 eV by adjusting the conditions under which the Schottky contact is fabricated. To explain the observed trends it is asserted (a) that there are several defect pinnin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c313cd1de7d0597e8bea9ec0ba2806b
https://doi.org/10.1103/physrevb.59.8182
https://doi.org/10.1103/physrevb.59.8182
Autor:
Vincent M. Hietala, T. J. Drummond, Stephen A. Casalnuovo, Gregory C. Frye-Mason, J.F. Klem, Edwin J. Heller, Albert G. Baca
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1254-1258
An oscillator technology using surface acoustic wave (SAW) delay lines integrated with GaAs MESFET electronics has been developed for GaAs-based integrated microsensor applications. The oscillator consists of a two-port SAW delay line in a feedback l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c17db2e910d7b37e8ce1f09c62223382
https://doi.org/10.1109/4.782084
https://doi.org/10.1109/4.782084
Publikováno v:
Journal of Applied Physics. 80:2132-2137
Si‐implant activation characteristics in AlxGa1−xAs for Al compositions of 0%–70% AlAs are presented for doses of 5.6×1012 and 2.8×1013 cm−2 at 100 keV. For both doses, the effective activation efficiency (ηeff) is relatively constant from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f87a72a9b9b4bd766a56e6201b22ba8
https://doi.org/10.1063/1.363556
https://doi.org/10.1063/1.363556
Autor:
T. J. Drummond, M.E. Sherwin, D. J. Rieger, A. J. Howard, Randy J. Shul, Richard P. Schneider, John C. Zolper, Albert G. Baca, John F. Klem
Publikováno v:
Journal of Electronic Materials. 23:809-818
Zinc and magnesium implants into GaAs were profiled with secondary ion mass spectroscopy and etching capacitance-voltage to measure the as-implanted and annealed profiles for the eventual formation of shallow p+/n junction gates for junction field ef
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbcf628e2d1d04f430686284a5bca4d8
https://doi.org/10.1007/bf02651377
https://doi.org/10.1007/bf02651377
Publikováno v:
Advances in X-ray Analysis. 38:201-213
Reciprocal space mapping can be efficiently carried out using a position-sensitive x-ray detector (PSD) coupled to a traditional double-axis diffractometer. The PSD offers parallel measurement of the total scattering angle of all diffracted x-rays du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::752bec79d80b98d0fabb473732386d87
https://doi.org/10.1154/s0376030800017808
https://doi.org/10.1154/s0376030800017808
Publikováno v:
Journal of Applied Physics. 69:717-721
The critical radius of a strained quantum wire and the potential strain stabilization of quantum wire arrays has been investigated for the InxGa1−xAs/GaAs system. The critical radius of the quantum wire was calculated using an energy balance approa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::639da6520b8fef0a6714eba1c68b3297
https://doi.org/10.1063/1.347355
https://doi.org/10.1063/1.347355
Autor:
Harold P. Hjalmarson, T. J. Drummond
Publikováno v:
Materials Science Forum. :1091-1096
Resonance states of impurities are shown to be long-lived if their coupling to the lattice is sufficiently large. The recombination of these states with band states is thermally activated which leads to extremely long lifetimes at low temperatures. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f63c5e9194f5f175967680e9fd5c15c
https://doi.org/10.4028/www.scientific.net/msf.38-41.1091
https://doi.org/10.4028/www.scientific.net/msf.38-41.1091
Autor:
T. Suski, Rupert C. C. Perera, K. Lawniczak-Jablonska, Zuzanna Liliental-Weber, T. J. Drummond, James H. Underwood, Eric M. Gullikson
Publikováno v:
Applied Physics Letters. 70:2711-2713
The energy distribution of the nitrogen antibonding electron states in the hexagonal epitaxial layers of AlN, GaN, and InN and cubic epitaxial layers of GaN and InN along pxy plane and pz direction is reported. The study was performed by the polarize
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48c9b24d0a6b5aa577a7b9c0a3298267
https://doi.org/10.1063/1.119000
https://doi.org/10.1063/1.119000
Autor:
Hsiang-Chen Chui, T. J. Drummond, Robert Hull, B.E. Hammons, Kent M. Geib, Hong Q. Hou, Kent D. Choquette
Publikováno v:
Applied Physics Letters. 69:1385-1387
We report significant differences between the properties of buried oxides converted from AlGaAs and AlAs layers using selective wet oxidation. Layers of AlxGa1−xAs with x≥0.96 exhibit crystallographic dependent oxidation rates, while for layers w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de53b6eafe97e4e677bdb671a063631b
https://doi.org/10.1063/1.117589
https://doi.org/10.1063/1.117589