Zobrazeno 1 - 10
of 53
pro vyhledávání: '"T. J. De Lyon"'
Autor:
Sevag Terterian, Tahir Hussain, Hwa-Chang Seo, K.-A. Son, T. J. de Lyon, Hasan Sharifi, D. Wong, Jeong-Sun Moon
Publikováno v:
IEEE Transactions on Nanotechnology. 14:10-14
We report the first demonstration of: 1) wide-wavelength range, infrared transparent conductors (ITCs) made of silver nanowires (Ag NWs), and 2) ITC contact-integrated prototype, InAsSb mid-wavelength IR (MWIR) detectors. The Ag NW-based ITCs show op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f225b0b7464b45805c8b18cb7e5b7093
https://doi.org/10.1109/tnano.2014.2366475
https://doi.org/10.1109/tnano.2014.2366475
Autor:
J. P. Curzan, B. Tu, T. J. de Lyon, Rajesh D. Rajavel, Hasan Sharifi, M. Roebuck, J. Jenkins, J. Caulfield, W. Strong, Sevag Terterian
Publikováno v:
Infrared Technology and Applications XLIII.
We describe our recent results in developing and maturing small pixel (5μm pitch), high definition (HD) mid-wave infrared (MWIR) detector technology as well as focal-plane-array (FPA) hybrids, and prototype 2.4 Megapixel camera development operating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09f03d2f62e8435ad617478cc1243646
https://doi.org/10.1117/12.2267879
https://doi.org/10.1117/12.2267879
Autor:
W. Strong, B. Tu, T. J. de Lyon, J. Jenkins, J. Caulfield, Hasan Sharifi, Rajesh D. Rajavel, J. P. Curzan, M. Roebuck, Sevag Terterian
Publikováno v:
Infrared Technology and Applications XLIII.
Barrier detectors based on III-V materials have recently been developed to realize substantial improvements in the performance of mid-wave infrared (MWIR) detectors, enabling FPA performance at high operating temperatures. The relative ease of proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdab81e7bee7b75b755dc4a2c66cae0a
https://doi.org/10.1117/12.2266281
https://doi.org/10.1117/12.2266281
Autor:
Priyalal Wijewarnasuriya, Christoph H. Grein, Rajesh D. Rajavel, D. Okerlund, T. J. de Lyon, A. C. Ionescu, E. Robinson, Hasan Sharifi, Daniel Yap, A. I. D'Souza, Nibir K. Dhar, M. Roebuck
Publikováno v:
Journal of Electronic Materials. 41:2671-2678
InAs1−x Sb x material with an alloy composition of the absorber layer adjusted to achieve 200-K cutoff wavelengths in the 5-μm range has been grown. Compound-barrier (CB) detectors were fabricated and tested for optical response, and J dark–V d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c338d3904d5ea9490f504a052ff49b54
https://doi.org/10.1007/s11664-012-2182-7
https://doi.org/10.1007/s11664-012-2182-7
Autor:
B. T. Holden, M. F. Boag-O’Brien, David T. Chang, Rajesh D. Rajavel, R. N. Jacobs, Pamela R. Patterson, M. L. Beliciu, Sevag Terterian, Brett Z. Nosho, J. D. Benson, T. J. de Lyon
Publikováno v:
Journal of Electronic Materials. 39:1058-1062
An investigation of the heteroepitaxial growth of HgCdTe films onto InSb(211)B substrates is reported. High-quality HgCdTe(211)B single-crystal films have been successfully deposited onto InSb(211)B substrates and have been characterized with x-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad2c1ce249277121aa65b67a7cc4c716
https://doi.org/10.1007/s11664-009-1041-7
https://doi.org/10.1007/s11664-009-1041-7
Autor:
Vaidya Nathan, J. E. Jensen, Joseph P. Rosbeck, Jeffrey M. Peterson, W. A. Radford, A. A. Buell, Edward P. Smith, J. B. Varesi, M. D. Newton, M. F. Vilela, G. M. Venzor, T. J. de Lyon, R. E. Bornfreund, Scott M. Johnson
Publikováno v:
Journal of Electronic Materials. 33:526-530
The heteroepitaxial growth of HgCdTe on large-area Si substrates is an enabling technology leading to the production of low-cost, large-format infrared focal plane arrays (FPAs). This approach will allow HgCdTe FPA technology to be scaled beyond the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d429d64057e4fe9c53c9da83d005b8
https://doi.org/10.1007/s11664-004-0041-x
https://doi.org/10.1007/s11664-004-0041-x
Autor:
R. A. Coussa, J. E. Jensen, K. Kosai, Edward P. Smith, Gregory K. Pierce, T. J. de Lyon, A. M. Gallagher, James R. Waterman, John A. Roth, L. T. Pham, G. M. Venzor, Brett Z. Nosho
Publikováno v:
Journal of Electronic Materials. 33:517-525
For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems’ architecture for integrated, dual-band detectors uses the sequential mode of the n-p+-n configuration. There is a single indium bump per pixel, leaving the p+ layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cb28451df493ed3ceca597367aa1a3
https://doi.org/10.1007/s11664-004-0040-y
https://doi.org/10.1007/s11664-004-0040-y
Autor:
E. A. Patten, J. E. Jensen, K. Kosai, L. T. Pham, Gregory K. Pierce, W. A. Radford, P. M. Goetz, Brett Z. Nosho, L. M. Giegerich, Edward P. Smith, Valerie Randall, R. A. Coussa, Elyse Norton, Stefan T. Baur, R. E. Longshore, Scott M. Johnson, John Edwards, G. M. Venzor, T. J. de Lyon, A. M. Gallagher, M. D. Newton, John A. Roth
Publikováno v:
Journal of Electronic Materials. 33:509-516
Raytheon Vision Systems (RVS, Goleta, CA) in collaboration with HRL Laboratories (Malibu, CA) is contributing to the maturation and manufacturing readiness of third-generation, dual-color, HgCdTe infrared staring focal plane arrays (FPAs). This paper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8fdf07117c3fe9aadfbf6fa83c623dd
https://doi.org/10.1007/s11664-004-0039-4
https://doi.org/10.1007/s11664-004-0039-4
Autor:
J. E. Jensen, T. J. de Lyon, Steven L. Bailey, M. D. Jack, Gregory L. Olson, Andrew T. Hunter, John A. Roth
Publikováno v:
Journal of Electronic Materials. 31:688-693
The application of spectroscopic ellipsometry (SE) for real-time composition determination during molecular beam epitaxy (MBE) growth of Hg1-xCdxTe alloys with x > 0.5 is reported. Techniques previously developed for SE determination of composition i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db29fc8f5e2b59ba1fce30d7d5513338
https://doi.org/10.1007/s11664-002-0220-6
https://doi.org/10.1007/s11664-002-0220-6
Publikováno v:
Journal of Electronic Materials. 31:220-226
Results are reported on the molecular-beam epitaxial (MBE) growth and electrical performance of HgCdTe midwave-infrared (MWIR) detector structures. These devices are designed for operation in the 140–160 K temperature range with cutoff wavelengths
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2431174ecfd0b13c495a12b591eec3ce
https://doi.org/10.1007/s11664-002-0210-8
https://doi.org/10.1007/s11664-002-0210-8