Zobrazeno 1 - 10
of 151
pro vyhledávání: '"T. Irisa"'
Akademický článek
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Autor:
C. Tanaka, A. Kumagai, Hiroyuki Watanabe, N. Ozawa, Satohiro Masuda, K. Nakashima, K. Hata, T. Irisa
Publikováno v:
Annals of Oncology. 28:v516
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944d0e83ba50467001e5aa6162235f9b
https://doi.org/10.1093/annonc/mdx385.016
https://doi.org/10.1093/annonc/mdx385.016
Autor:
K. Miyanishi, Y. Noguchi, T. Yamamoto, T. Irisa, E. Suenaga, S. Jingushi, Y. Sugioka, Y. Iwamoto
Publikováno v:
The Journal of Bone and Joint Surgery. British volume. :512-516
We have studied the correlation between the prevention of progressive collapse and the ratio of the intact articular surface of the femoral head, after transtrochanteric rotational osteotomy for osteonecrosis. We used probit analysis on 125 hips in o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f208db3e9232801081a47880589120f
https://doi.org/10.1302/0301-620x.82b4.0820512
https://doi.org/10.1302/0301-620x.82b4.0820512
Autor:
Y, Tanabe, K, Yoshida, S, Shinomiya, K, Tominaga, K, Hiroshige, N, Koyanagi, K, Takenaka, T, Irisa
Publikováno v:
Nihon Shokakibyo Gakkai zasshi = The Japanese journal of gastro-enterology. 88(8)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::5747d1a792e43366546b6b50662c827c
https://pubmed.ncbi.nlm.nih.gov/1658419
https://pubmed.ncbi.nlm.nih.gov/1658419
Publikováno v:
Applied Physics Letters. 91:092501
A IV-VI ferromagnetic semiconductor Ge1−xCrxTe (x∼0.06) with Curie temperature TC up to 180K is grown by molecular-beam epitaxy. The magnetization is well reproduced from anomalous Hall effect. As the Te∕Cr flux ratio increases during the growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc78b267eef57433d5c3232d21f5f91
https://doi.org/10.1063/1.2772669
https://doi.org/10.1063/1.2772669
Publikováno v:
Applied Physics Letters. 89:152506
IV-VI ferromagnetic semiconductor Ge1−xCrxTe has been grown on BaF2 (111) by molecular beam epitaxy. The ferromagnetism was clearly established by direct magnetization and Hall measurements. The experimental correlation between the anomalous Hall r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9706fd48f630cd874ca6ae82b385da26
https://doi.org/10.1063/1.2360903
https://doi.org/10.1063/1.2360903
Publikováno v:
Journal of Applied Physics. 99:08D508
IV-VI diluted magnetic semiconductor Ge1−xCrxTe films were grown on BaF2 substrates by molecular-beam epitaxy. The Ge1−xCrxTe film up to x=0.103 is single phase as determined by reflection high-energy electron diffraction and x-ray diffraction me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ac7a69f7028ee9b846203691477e17c
https://doi.org/10.1063/1.2163830
https://doi.org/10.1063/1.2163830
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Autor:
T. Irisawa, N. Okada, W. Mizubayashi, T. Mori, W.-H. Chang, K. Koga, A. Ando, K. Endo, S. Sasaki, T. Endo, Y. Miyata
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1159-1163 (2018)
Position and growth direction control in chemical vapor deposition (CVD) of WS2 and SnS2 by using patterned Si/SiO2 substrates has been demonstrated. It was found that step edges effectively worked as crystal nuclei and lateral crystal growth from th
Externí odkaz:
https://doaj.org/article/88dd6a6f706b487897c0a41b60b08c2b
Publikováno v:
Journal of Inorganic Biochemistry. 67:239
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26706c07d23cb7a6c8bc7ce95bbc28b4
https://doi.org/10.1016/s0162-0134(97)80112-2
https://doi.org/10.1016/s0162-0134(97)80112-2