Zobrazeno 1 - 4
of 4
pro vyhledávání: '"T. Ifstrom"'
Publikováno v:
Microelectronic Engineering. 19:153-156
Silicon direct bonding (SDB) has been used to produce silicon-on-insulator (SOI) substrates for dielectrically isolated power devices. The up-drain VDMOS transistors give a low specific on-resistance and allow multiple isolated outputs. The CMOS devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73cc8a9423fcd8830f237a1af71d4fd4
https://doi.org/10.1016/0167-9317(92)90412-k
https://doi.org/10.1016/0167-9317(92)90412-k
Publikováno v:
IEEE Transactions on Electron Devices. 38:1655-1659
A novel LDMOS transistor structure with breakdown voltages above 100 V has been fabricated in silicon-on-insulator-on-silicon (SOIS). This structure has been fabrication by silicon direct bonding (SDB) and etch-back to a typical film thickness of 1 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c271606968f2e43db65cff9abf68e4
https://doi.org/10.1109/16.85163
https://doi.org/10.1109/16.85163
Publikováno v:
IEEE Electron Device Letters. 13:460-461
Silicon on insulator on silicon (SOIS) has been produced with silicon direct bonding (SDB). Within a silicon film of 15- mu m thickness, islands with ubiquitous oxide isolation have been formed for the simultaneous integration of 150-V power VDMOS tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64278e415842672ce3c71426ca0f8933
https://doi.org/10.1109/55.192794
https://doi.org/10.1109/55.192794
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