Zobrazeno 1 - 10
of 24
pro vyhledávání: '"T. I. Cox"'
Publikováno v:
Microscopy of Semiconducting Materials, 1983
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::846d2fcc18f5da18e19c47bf6b991d32
https://doi.org/10.1201/9781003069614-71
https://doi.org/10.1201/9781003069614-71
Publikováno v:
Weed Research. 35:429-436
Summary Patterns of seedling emergence of ten weed species from soil cultivated at intervals of approximately one month are described. All species examined showed clearly defined emergence patterns. Polygonum persicaria L. seedlings emerged in spring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf7a93bb5af48d0e247e694139464bad
https://doi.org/10.1111/j.1365-3180.1995.tb01639.x
https://doi.org/10.1111/j.1365-3180.1995.tb01639.x
Publikováno v:
Weed Research. 34:403-412
Summary: Resume: Zusammenfassung The long-term effect of different depths of soil cultivation on weed seedling emergence from naturally occurring populations of weed seeds in the soil was examined in four experiments on land previously in pasture, ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb88646ced7b0c06fe5984b387247043
https://doi.org/10.1111/j.1365-3180.1994.tb02036.x
https://doi.org/10.1111/j.1365-3180.1994.tb02036.x
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1685-1689
The reactive ion beam etching (RIBE) of tungsten with carbon tetrafluoride (CF4))/Ar mixtures has been studied. The beam energy was kept constant at 550 eV. Helium or neon was added to the gas mixture to give about 5% He+ or Ne+ in the beam. Ions eje
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e8bfe8c8feec347f2516c66051145b4
https://doi.org/10.1116/1.576830
https://doi.org/10.1116/1.576830
Publikováno v:
Proceedings of the New Zealand Weed and Pest Control Conference. 43:43-47
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f30ba902e4c0feb9b02ab6480ccfff9
https://doi.org/10.30843/nzpp.1990.43.10936
https://doi.org/10.30843/nzpp.1990.43.10936
Publikováno v:
Micro Total Analysis Systems 2001 ISBN: 9789401038935
Efficient mixing is achieved by alternately introducing slugs of liquids into a microfluidic channel and driving them along the channel under pressure-driven flow.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1538540fb199302f6d03582ee5c2076c
https://doi.org/10.1007/978-94-010-1015-3_58
https://doi.org/10.1007/978-94-010-1015-3_58
Publikováno v:
Advanced Techniques for Integrated Circuit Processing.
Initial results on the application of adaptive network concepts to the problem of dry etching control are given in this paper. The role of off-line experimentation and analysis in defining a suitable parametric model for a dry etching process is firs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a3186eff55a3701220003f4b03e4917
https://doi.org/10.1117/12.48929
https://doi.org/10.1117/12.48929
Publikováno v:
Advanced Techniques for Integrated Circuit Processing.
This paper describes the use of physical diagnostics of plasma and etch reactor to provide a predictive capability for a particular dry etching process namely the reactive ion etching of organic polymers in an oxygen plasma. In particular the shape (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37b3b792edcc71bfb48643ab087ed73d
https://doi.org/10.1117/12.48913
https://doi.org/10.1117/12.48913
Publikováno v:
Plasma-Surface Interactions and Processing of Materials ISBN: 9789401073691
Reactive ion beam etching (RIBE) offers intrinsic interest as an etch technique and its comparatively low operating pressure (10-4 torr in the bombardment chamber) allows the application of ion beam based surface analytical techniques to monitor the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44365340d3558cf733ca08635fb0cddb
https://doi.org/10.1007/978-94-009-1946-4_21
https://doi.org/10.1007/978-94-009-1946-4_21
Autor:
T I Cox, V G I Deshmukh
Publikováno v:
Plasma Physics and Controlled Fusion. 30:21-33
Dry etching using gaseous plasmas is an essential technique in the delineation of ultrafine features required for integrated circuits in today's silicon based technologies. The authors give examples of the use of dry etching and describes a selection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af6f17110c8955c46874f320d8ecee9
https://doi.org/10.1088/0741-3335/30/1/004
https://doi.org/10.1088/0741-3335/30/1/004