Zobrazeno 1 - 8
of 8
pro vyhledávání: '"T. H. Teherani"'
Autor:
P. K. Liao, P. D. Dreiske, F. Aqariden, T.A. Shafer, T. H. Teherani, H. F. Schaake, T. Murphy, M. A. Kinch, H. D. Shih
Publikováno v:
Journal of Electronic Materials. 36:900-904
Hg1−x Cd x Te samples of x ~ 0.3 (in the midwave infrared, or MWIR, spectral band) were prepared by molecular beam epitaxy (MBE) for fabrication into 30-μm-pitch, 256 × 256, front-side-illuminated, high-density vertically-integrated photodiode (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a8bdecb11093aa5fe80546e2b607c76
https://doi.org/10.1007/s11664-007-0127-3
https://doi.org/10.1007/s11664-007-0127-3
Autor:
D. Chandra, M. A. Kinch, F. Aqariden, H. F. Schaake, D. F. Weirauch, T. H. Teherani, H. D. Shih, P. D. Dreiske
Publikováno v:
Journal of Electronic Materials. 35:1470-1473
Exposure to specific damage introduced by either ion implantation or ion milling converts p-type short wavelength infrared (SWIR) HgCdTe to n-type in a manner similar to the conversions in medium wavelength infrared (MWIR) or long wavelength infrared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2169b5b0b4d82b39a3088d25174b58fb
https://doi.org/10.1007/s11664-006-0286-7
https://doi.org/10.1007/s11664-006-0286-7
Autor:
T. H. Teherani, D. Chandra, P. D. Dreiske, M. A. Kinch, H. D. Shih, H. F. Schaake, F. Aqariden, D. F. Weirauch
Publikováno v:
Journal of Electronic Materials. 34:864-867
Arsenic incorporated in HgCdTe epifilms at levels ranging from 6×1014 to 4×1016 cm−3, and activated completely as an acceptor, converts into a donor upon introduction of specific damage introduced by ion milling, ion implantation, or ECR. The res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993f6ccc6b9d239359f1d6bae8b6559b
https://doi.org/10.1007/s11664-005-0033-5
https://doi.org/10.1007/s11664-005-0033-5
Autor:
A. H. Kalma, P. K. Liao, M. J. Ohlson, F. Aqariden, P. D. Dreiske, H. D. Shih, T. W. Orent, T. H. Teherani, M. A. Kinch, H. F. Schaake, Franklin M. Roush, J. E. Robinson
Publikováno v:
Applied Physics Letters. 84:1263-1265
Excellent high-operating-temperature infrared photodiodes in the medium-wavelength infrared spectral band with cutoff wavelengths ∼5 μm at 77 K were fabricated on Hg1−xCdxTe samples (x∼0.30) prepared by liquid-phase epitaxy in a tellurium-melt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::785406c8e2e3042bca0ede23190d7d4a
https://doi.org/10.1063/1.1650042
https://doi.org/10.1063/1.1650042
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 5:3207-3210
Anodic sulfide films were grown on HgCdTe and studied by Auger electron spectroscopy, surface analysis by laser ionization, Rutherford backscattering spectroscopy, Raman and photoluminescence spectroscopy, and high‐resolution transmission electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fbf93f991dd38e04081be79899cf2aa
https://doi.org/10.1116/1.574839
https://doi.org/10.1116/1.574839
Publikováno v:
Journal of The Electrochemical Society. 131:1973-1980
A fully computerized system has been set up for the life testing of H/sub 2/ electrodes in 48% HBr, and of H/sub 2//Br/sub 2/ fuel cells. Given a fuel cell design with dry H/sub 2/ and no anolyte loop, the prime parameters influencing the operating l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15d4dfee93bcb11677b728491eb48281
https://doi.org/10.1149/1.2116003
https://doi.org/10.1149/1.2116003
Publikováno v:
Journal of The Electrochemical Society. 129:2464-2468
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c055262d55488bb6bc1de6dcd609475c
https://doi.org/10.1149/1.2123568
https://doi.org/10.1149/1.2123568
Publikováno v:
Chemischer Informationsdienst. 14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1bb74b73aae6583309ccd01fa859aa8
https://doi.org/10.1002/chin.198311025
https://doi.org/10.1002/chin.198311025