Zobrazeno 1 - 10
of 17
pro vyhledávání: '"T. H. Stuchliková"'
Autor:
Vladimir A. Volodin, Andrew Taylor, Vincent Mortet, T. H. Stuchliková, Zdenek Remes, Jiří Stuchlík
Publikováno v:
Solid State Communications. 276:33-36
Heavily boron doped nanocrystalline diamond films grown on glass substrates by the method of plasma-chemical deposition, were investigated using Raman spectroscopy. Analysis of the spectra showed both the phonon confinement effect in nanocrystalline
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b633918dd8cc617908d957dd542d05
https://doi.org/10.1016/j.ssc.2018.04.004
https://doi.org/10.1016/j.ssc.2018.04.004
Autor:
Jiri Stuchlik, Vladimir A. Volodin, Vincent Mortet, Z. Remes, T. H. Stuchliková, Alexander A. Shklyaev, Petr Ashcheulov, G. K. Krivyakin, J. More-Chevalier
Publikováno v:
Semiconductors. 51:1370-1376
Four pairs of p–i–n structures based on polymorphous Si:H (pm-Si:H) are fabricated by the method of plasma-enhanced chemical vapor deposition. The structures in each pair are grown on the same substrate so that one of them does not contain Ge in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a1e8dc134aac2fe1bc99d2ba1b4a16
https://doi.org/10.1134/s1063782617100128
https://doi.org/10.1134/s1063782617100128
Autor:
S. G. Cherkova, Vladimir A. Volodin, Vivek Kumar, V. A. Sachkov, T. H. Stuchliková, Jiří Stuchlík, Zdenek Remes, Andrew Taylor, Vincent Mortet
Publikováno v:
International Conference on Micro- and Nano-Electronics 2018.
A set of nanocrystalline diamond films was grown using microwave plasma enhanced chemical vapor deposition on fused silica substrates from methane diluted by hydrogen: with and without the addition of trimethylborane. The boron to carbon ratio in the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11ffb933028f889c39b87f68a3013ab1
https://doi.org/10.1117/12.2521498
https://doi.org/10.1117/12.2521498
Autor:
Radek Fajgar, T. H. Stuchliková, A. Purkrt, G. N. Kamaev, Jiri Stuchlik, S. A. Kochubei, Vladimir A. Volodin, Z. Remes, G. K. Krivyakin
Publikováno v:
Semiconductors. 50:935-940
Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05f87edaff0e601f8c3e13319c9ade81
https://doi.org/10.1134/s1063782616070101
https://doi.org/10.1134/s1063782616070101
Autor:
T. H. Stuchliková, Jan Kočka, Jiří Červenka, Antonín Fejfar, Matěj Hývl, Martin Müller, Jiří Stuchlík, Martin Šilhavík
Publikováno v:
Nanotechnology. 31:225601
We report the results of a microscopic study of the nucleation and early growth stages of metal-catalyzed silicon nanowires in plasma-enhanced chemical vapor deposition. The nucleation of silicon nanowires is investigated as a function of different d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a6404261e81983e07635d6f05a6232d
https://doi.org/10.1088/1361-6528/ab76ef
https://doi.org/10.1088/1361-6528/ab76ef
Autor:
Konstantin Zhuravlev, Jiri Stuchlik, Tomas Novak, Vladislav Dřínek, Radek Fajgar, T. H. Stuchliková, Z. Remes
Publikováno v:
Acta Polytechnica, Vol 54, Iss 6, Pp 426-429 (2014)
We optimized the optical setup originally designed for the photoluminescence measurements in the spectral range 400‒1100 nm. New design extends the spectral range into the near infrared region 900‒1700 nm and allows the colloidal solutions measur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf940244801853a6cde914631df13c59
https://doi.org/10.14311/ap.2014.54.0426
https://doi.org/10.14311/ap.2014.54.0426
Autor:
Zdenek Remes, Petr Ashcheulov, Jiri Stuchlik, Vladimir A. Volodin, Jaroslav Kupčík, T. H. Stuchliková, Vincent Mortet, Andrew Taylor
Publikováno v:
The European Physical Journal Applied Physics. 88:30302
Hydrogenated amorphous substoichiometric silicon carbon alloys (a-SiC:H) with and without embedded Ge nanoparticles (NPs) have been prepared by plasma enhanced chemical vapour deposition combined with in-situ Ge evaporation and annealing on semi-tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac8b52af02a386ae9a3fce30501d7e11
https://doi.org/10.1051/epjap/2020190253
https://doi.org/10.1051/epjap/2020190253
Autor:
Vincent Mortet, Vladimir A. Volodin, Petr Ashcheulov, Andrew Taylor, T. H. Stuchliková, Jiří Stuchlík, Zdenek Remes
Publikováno v:
Vacuum. 168:108813
Boron doped diamond is a prospective material which can be used as a conductive and optically transparent thin-film electrode in a variety of optoelectronic applications. In this work, we present the results of the temperature resolved electrical con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::661ca003d9eb7efdfa97cbe71c365cee
https://doi.org/10.1016/j.vacuum.2019.108813
https://doi.org/10.1016/j.vacuum.2019.108813
Autor:
Jiří Stuchlík, Radek Fajgar, T. H. Stuchliková, Zdenek Remes, Adam Purkrt, S. A. Kochubei, G. K. Krivyakin, A. V. Dvurechendkii, Alexander A. Shklyaev, G. N. Kamaev, Vladimir A. Volodin
Publikováno v:
SPIE Proceedings.
Silicon nanocrystals and germanium nanolayers and nanocrystals were created into i-layers of p–i–n structures based on thin hydrogenated amorphous silicon films. The nanocrystals were formed using pulsed laser annealing with an excimer XeCl laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d219961b68f2050c24cf9b388b7aca
https://doi.org/10.1117/12.2266436
https://doi.org/10.1117/12.2266436
Autor:
Igor M. Chernev, Z. Remes, T. H. Stuchliková, A. V. Shevlyagin, J. Stuchlik, Nikolay G. Galkin, K. N. Galkin
Publikováno v:
Physics, Chemistry and Applications of Nanostructures: Proceedings of International Conference Nanomeeting – 2015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f6c528835a07fba430f22b288c64feb
https://doi.org/10.1142/9789814696524_0130
https://doi.org/10.1142/9789814696524_0130
