Zobrazeno 1 - 10
of 17
pro vyhledávání: '"T. H. Ivers"'
Autor:
R. Kombargi, E. Taylor, D. Nadle, Gerald Navratil, T. H. Ivers, M. K. Vijaya Sankar, E. Eisner, Am Garofalo, Q. Xiao, Michael E. Mauel, D.A. Maurer
Publikováno v:
Nuclear Fusion. 38:1029-1042
The characteristics of external kink instabilities observed during wall stabilization studies in the HBT-EP tokamak have been compared with the predictions of ideal MHD theory, in order to examine the stabilizing role of a resistive wall that is segm
Autor:
E. Eisner, Gerald Navratil, M. Su, E. Taylor, Am Garofalo, T. H. Ivers, M. K. V. Sankar, D.A. Maurer, William A. Reass, R.R. Bartsch, D. Nadle, G. A. Wurden, Michael E. Mauel, Q. Xiao, R. Kombargi
Publikováno v:
Physics of Plasmas. 3:1926-1934
The High Beta Tokamak‐Extended Pulse (HBT‐EP) experiment [J. Fusion Energy 12, 303 (1993)] combines an internal, movable conducting wall with a high‐power, modular saddle coil system to provide passive and active control of long wavelength magn
Autor:
D.A. Maurer, R. Kombargi, Gerald Navratil, Michael E. Mauel, Am Garofalo, D. Nadle, D. Gates, M. K. Vijaya Sankar, E. Eisner, Q. Xiao, T. H. Ivers
Publikováno v:
Journal of Fusion Energy. 12:303-310
HBT-EP is a new research tokamak designed and built to investigate passive and active feedback techniques to control MHD instabilities. In particular, HBT-EP will be able to test techniques to control fast MHD instabilities occurring at high Troyon-n
Autor:
John A. Fitzsimmons, Vincent J. McGahay, K. Malone, M. Minami, Siddhartha Panda, Manfred Horstmann, A. Wei, Helmut Bierstedt, H. Nii, A. Waite, A. Sakamoto, Michael A. Gribelyuk, M. Cullinan-Scholl, D. Harmon, A. Hellmich, M. Kiene, Patrick Press, Hartmut Ruelke, H. Zhu, H. Chen, H. Nakayama, Anthony G. Domenicucci, G. Sudo, Henry A. Nye, P. Fisher, Hans-Jürgen Engelmann, H. VanMeer, M. Newport, X. Chen, Tenko Yamashita, Cathryn Christiansen, Hasan M. Nayfeh, Dureseti Chidambarrao, Guido Koerner, Christopher D. Muzzy, S.-F. Huang, Ralf Otterbach, David M. Fried, J. Kluth, Jörg Hohage, M. Trentsch, I. Peidous, Thorsten Kammler, Mukesh Khare, Dominic J. Schepis, K. Rim, Spooner Terry A, K. Miyamoto, P.V. McLaughlin, Michael Raab, T. H. Ivers, Dan Mocuta, D.R. Davies, Jason Gill, Scott Luning, Woo-Hyeong Lee, Gary B. Bronner, Judson R. Holt, Gregory G. Freeman, Matthias Schaller, R. Murphy, J. Pellerin, J. Klais, Kai Frohberg, A. Neu, N. Kepler, R. Bolam, C. Labelle, Anuj Madan, K. Hempel, C. Reichel, Heike Salz, J. Hontschel, T. Sato, J. Cheng, D. Greenlaw, Linda Black, Paul D. Agnello, K. Ida
Publikováno v:
Scopus-Elsevier
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization techniques are utilized to enhance transistor speed. Advanced-low-K BEOL for this technology features 10 wiring levels with a n
Autor:
J.C. Patel, Johnny Widodo, Anita Madan, Robert L. Wisnieff, Darryl D. Restaino, Brian Wayne Herbst, Spooner Terry A, Jason Gill, Hosadurga Shobha, C. Labelle, Stephan A. Cohen, Michael Lane, Eva E. Simonyi, Kelly Malone, X.-H. Liu, Y. Shimooka, Christopher D. Muzzy, Griselda Bonilla, P. Minami, Alfred Grill, John A. Fitzsimmons, T. H. Ivers, Steven E. Molis, Eric G. Liniger, Son Nguyen, Vincent J. McGahay, Robert Hannon, Henry A. Nye, T. Lee, Brett H. Engel, M. Kiene, F. Chen, Stephan Grunow, Cathryn Christiansen, M. Cullinan-Scholl, Derren N. Dunn, Timothy M. Shaw, Habib Hichri, Jeremy L. Martin, N. Klymko, P.V. McLaughlin, K. Ida, James J. Demarest, A. Sakamoto
Publikováno v:
2006 International Interconnect Technology Conference.
A low tensile stress SiCOH dielectric with K=2.15 has been developed for implementation in the 2times and 4times fatwire levels for enhanced RC performance in the 65nm technology node. Integration challenges related to mechanical integrity and proces
Autor:
Eva E. Simonyi, William F. Landers, T. H. Ivers, Thomas M. Shaw, K. Ida, D. Jung, Sujatha Sankaran, Kaushal Patel, Johnny Widodo, Naftali E. Lustig, M. Chae, Kaushik Chanda, G. A. Biery, Wan-jae Park, J. Sucharitaves, W. Liu, T. Ko, Christos D. Dimitrakopoulos, M. Kelling, Stephen M. Gates, R. G. Filippi, D. Nielsen, John A. Fitzsimmons, O. Bravo, M. Beck, Satya V. Nitta, Terry A. Spooner, L. Economikos, T. Bolom, Alfred Grill, John G. Pellerin, X. Liu, Eric G. Liniger, G. Matusiewicz, E. Kaltalioglu, C. Tian, Mukta G. Farooq, F. Chen, David L. Rath, Griselda Bonilla, D. Nguyen, Nicholas C. M. Fuller, P. Davis, S. Arai, Daniel C. Edelstein, J.P. Doyle, Kevin S. Petrarca, P. Ong, Kaushik A. Kumar, H. Wendt, L. Wiggins, V. Patel, Stephan Grunow, W. Li, L. Nicholson, I. Melville, Sanjay Mehta, Stephen E. Greco, J. Werking, Robert L. Wisnieff, B. Moon, Darryl D. Restaino, S. Marokkey, R. Hannon, Myoung-Bum Lee, Theodorus E. Standaert, Shom Ponoth, Paul S. McLaughlin, R. Augur, P. V. McLaughlin, C. Labelle, A. Cowley, H. Shoba, S. Rhee, K. Malone, Stephan A. Cohen, Michael Lane, E.T. Ryan, H. Landis, Larry Clevenger, James R. Lloyd, James J. Demarest, Andrew H. Simon, K. Miyata
Publikováno v:
2006 International Electron Devices Meeting.
A high performance 45nm BEOL technology with proven reliability is presented. This BEOL has a hierarchical architecture with up to 10 wiring levels with 5 in PECVD SiCOH (k=3.0), and 3 in a newly-developed advanced PECVD ultralow-k (ULK) porous SiCOH
Autor:
Eva E. Simonyi, Steven E. Molis, K. Ida, M. Sherwood, John A. Fitzsimmons, Daniel C. Edelstein, M. Minami, K. Inoue, Vincent J. McGahay, M. Ono, A. Sakamoto, Y. Shimooka, Baozhen Li, Kaushik A. Kumar, Christopher J. Penny, N. Klymko, M. Cullinan, Sujatha Sankaran, F. Chen, A. Madon, M. Sankar, Cathy Labelle, Johnny Widodo, Jason Gill, M. Fukasawa, Takeshi Nogami, Matthew Angyal, Darryl D. Restaino, Kelly Malone, Horatio S. Wildman, Philip L. Flaitz, Alfred Grill, Jeremy L. Martin, Eric G. Liniger, T. H. Ivers, Son Nguyen, Charles R. Davis, Leo Tai, Henry A. Nye, D. McHerron, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, Cathryn Christiansen, Kaushik Chanda, Ian D. Melville, P. McLaughlin, Sarah L. Lane
Publikováno v:
SPIE Proceedings.
This paper discusses low-k/copper integration schemes which has been in production in the 90 nm node, have been developed in the 65 nm node, and should be taken in the 45 nm node. While our baseline 65 nm BEOL process has been developed by extension
Autor:
Takeshi Nogami, Sarah L. Lane, Eva E. Simonyi, David P. Klaus, Stephen M. Gates, S. Vogt, N. Klymko, T. Van Kleeck, Charles R. Davis, K. Ida, Darryl D. Restaino, T. H. Ivers, X.-H. Liu, Timothy M. Shaw, Daniel C. Edelstein, M. Ono, Vishnubhai Vitthalbhai Patel, Stephan A. Cohen, Michael Lane, Alfred Grill, Eric G. Liniger
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
The research integration of SiCOH films in a reliable ULSI integrated circuit chip imposes many requirements on the properties of the dielectric material. This paper describes a selection and optimization process for choosing the best film to be inte
Autor:
Jason Gill, Vincent J. McGahay, Yanfeng Wang, Alexander J. Swinton, Richard A. Wachnik, Edward Barth, R. Rosenberg, X.-H. Liu, H. S. Rathore, Paul S. McLaughlin, J.F. McGrath, Brett H. Engel, Michael Lane, G. Goth, Terry A. Spooner, William F. Landers, Conal E. Murray, Ping-Chuan Wang, Timothy M. Shaw, C. Barile, James R. Lloyd, T. H. Ivers, John M. Aitken, G. A. Biery, James J. Demarest, R. Goldblatt, Charles R. Davis, R. G. Filippi, L. Nicholson
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
The reliability of a stacked via chain stressed under various thermal cycle conditions is described. The chain consists of Cu Dual Damascene metallization with SiLK (trademark of Dow Chemical) as the organic low-k dielectric. Failure analysis indicat
Autor:
Ian D. Melville, Henry A. Nye, Edward Barth, Paul S. McLaughlin, John A. Fitzsimmons, X. Chen, Vincent J. McGahay, T. H. Ivers, G. A. Biery, D.K. Manger, T.C. Chen, A. McDonald, E.N. Levine, Spooner Terry A, Ronald D. Goldblatt, S.E. Greco, C. DeWan
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
The integration of dual damascene copper with fluorosilicate glass (FSC) at the 0.18 /spl mu/m technology node is described. The BEOL structure has been implemented for an advanced CMOS technology, and along with an SOI FEOL is being used for high pe