Zobrazeno 1 - 10
of 33
pro vyhledávání: '"T. Grevatt"'
Autor:
R.S. Britton, A. Malinowski, Michelle Y. Simmons, T. Grevatt, David A. Ritchie, Richard T. Harley
Publikováno v:
Physical Review B. 62:13034-13039
Spin dynamics of photoexcited carriers in GaAs/AlxGa1-xAs quantum wells have been investigated in a wafer containing twelve different single quantum wells, allowing full investigation of well-width and temperature dependences with minimal accidental
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4c477041f54bec334016b215d52261c
https://doi.org/10.1103/physrevb.62.13034
https://doi.org/10.1103/physrevb.62.13034
Publikováno v:
Physical Review Letters. 76:3224-3227
We use reflective probing of transient linear birefringence to study coherent exciton dynamics in GaAs quantum wells as a function of applied magnetic field at low temperatures. The results show the significance of exchange-enhanced exciton spin rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d6a21c15b8edcc379e47c69fb900224f
https://doi.org/10.1103/physrevlett.76.3224
https://doi.org/10.1103/physrevlett.76.3224
Autor:
A. Malinowski, Richard T. Harley, P. Perozzo, A. R. Cameron, T. Grevatt, Alan Miller, R.S. Britton
Publikováno v:
Applied Physics Letters. 73:2140-2142
We have explored the dependence of electron spin relaxation in undoped GaAs/AlGaAs quantum wells on well width (confinement energy) at 300 K. For wide wells, the relaxation rate tends to the intrinsic bulk value due to the D’yakonov–Perel (DP) me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b5224166a9a6ed76df0c124b19696a
https://doi.org/10.1063/1.122403
https://doi.org/10.1063/1.122403
Autor:
St. J. Dixon-Warren, A.J. Spring Thorpe, G. Knight, T. Grevatt, J.K. White, Edward H. Sargent, R. W. Streater, Dayan Ban, G. Pakulski
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. We report the results of calibrated high-spatial-resolution SSRM measurement, showing that we are able to resolve individual quantum wells and determine the activated doping of the p-n-p-n thyristor current blocking layers of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88e8674f039863cc3b0ded5cd7a77e9a
https://doi.org/10.1109/cleo.2002.1034410
https://doi.org/10.1109/cleo.2002.1034410
Autor:
St. J. Dixon-Warren, T. Grevatt, G. Knight, Dayan Ban, J.K. White, G. Pakulski, Edward H. Sargent
Publikováno v:
Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges.
Summary form only given. In nanopotentiometry, a conductive atomic force microscope tip is used as a voltage probe to measure the distribution of the electrical potential on a surface. We report the application of this technique to a buried heterostr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88236073b0aef17f9d53c14eef7607be
https://doi.org/10.1109/cleo.2002.1033994
https://doi.org/10.1109/cleo.2002.1033994
Publikováno v:
OFC 2003 Optical Fiber Communications Conference, 2003..
We report on in-situ etched and regrown buried heterostructure devices. Excellent surface morphology and reduction in surface damage lead to a 20% decrease in threshold current and 50% reduced burn-in degradation rates compared with standard processe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72eb3c8131321b2e4578b57d7c4fe04a
https://doi.org/10.1109/ofc.2003.316106
https://doi.org/10.1109/ofc.2003.316106
Publikováno v:
Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236).
We describe comprehensive measurements of spin relaxation in undoped MBE GaAs-Al/sub 0.35/Ga/sub 0.65/As quantum wells at room temperature and down to 10 K. Samples from several sources have been investigated and are compared with results from other
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc8f6605174ae4a3a4fe8edafe1f34f0
https://doi.org/10.1109/iqec.1998.680391
https://doi.org/10.1109/iqec.1998.680391
Autor:
G. Pakulski, R. W. Streater, St. J. Dixon-Warren, Edward H. Sargent, Anthony J. SpringThorpe, T. Grevatt, G. Knight, J.K. White, Dayan Ban
We report results of a scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) study of the distribution of charge carriers inside multi-quantum-well (MQW) buried heterostructure (BH) lasers. We demonstrate that indi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ba7826140da59ed9fe0441c8cdef0f5
https://nrc-publications.canada.ca/eng/view/object/?id=e95e92d8-5414-4ad9-b986-93c894e2bcca
https://nrc-publications.canada.ca/eng/view/object/?id=e95e92d8-5414-4ad9-b986-93c894e2bcca
Publikováno v:
Applied Physics Letters. 63:1601-1603
Thin film optical waveguides of the chalcogenide glass Ga-La-S have been deposited on substrates of CaF2 and microscope glass by the technique of pulsed laser deposition. The chalcogenide properties of photobleaching, photodoping, and photoinduced re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b8ff445de332e8e955ddd93d96c4c13
https://doi.org/10.1063/1.110730
https://doi.org/10.1063/1.110730
Publikováno v:
EQEC 96 1996 European Quantum Electronic Conference EQEC-96.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0f1a91410cd505b02f2cf30bfb0a32a
https://doi.org/10.1109/eqec.1996.561512
https://doi.org/10.1109/eqec.1996.561512