Zobrazeno 1 - 10
of 76
pro vyhledávání: '"T. Grabolla"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor g
Externí odkaz:
https://doaj.org/article/437b9e6e890d4f0b9a0094b3ddfb0afe
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/4f9b79be76fe41669de01e71dbdb4648
Autor:
Andreas Mai, Mindaugas Lukosius, T. Grabolla, Fatima Akhtar, Rasuole Lukose, Mirko Fraschke, M. Lisker
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
The original version of this Article omitted an affiliation for M. Lisker. The correct affiliations for M. Lisker are listed below: IHP- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236, Frankfurt (Oder), Germany Technic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7bab816303b2f8608da65334279777f
https://doi.org/10.1038/s41598-021-96605-z
https://doi.org/10.1038/s41598-021-96605-z
Autor:
Fatima Akhtar, Mindaugas Lukosius, Mirko Fraschke, Rasuole Lukose, M. Lisker, Andreas Mai, T. Grabolla
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Scientific Reports
Scientific Reports, 11, Article-Nr. 13111
Scientific Reports
Scientific Reports, 11, Article-Nr. 13111
One of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth waf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bf8a60b4476149be23c7ec6753dc3f6
https://doi.org/10.1038/s41598-021-92432-4
https://doi.org/10.1038/s41598-021-92432-4
Autor:
Hans Richter, W. von Ammon, G. Kissinger, T. Grabolla, T. Müller, Walter Dipl.-Phys. Dr. Häckl, Andreas Sattler, P. Krottenthalerc
Publikováno v:
Materials Science in Semiconductor Processing. 9:236-240
Ham's theory was applied in order to become independent of detection limits for oxide precipitates and to quantify the phenomenon of oxygen loss to invisible BMDs during thermal treatments. The density of detectable bulk micro-defects (BMDs) depends
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af9198b9eed85a69320252f210a3d0c2
https://doi.org/10.1016/j.mssp.2006.01.039
https://doi.org/10.1016/j.mssp.2006.01.039
Autor:
B. Garrido, A. Cuadras, Luis Fonseca, T. Grabolla, K. Pressel, Bernd Tillack, Joan Ramon Morante
Publikováno v:
Journal of Electronic Materials. 33:1022-1027
We describe and model the electrical response of interface states of metal-oxide semiconductor (MOS) capacitors fabricated from Si1−x−yGexCy strained layers as a function of C concentration. We find that the introduction of Ge and C in the epilay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84d6d3ed5576e88eb85454b34f9fc038
https://doi.org/10.1007/s11664-004-0030-0
https://doi.org/10.1007/s11664-004-0030-0
Autor:
V. Ramgopal Rao, Ignaz Eisele, T. Grabolla, Dinesh K. Sharma, Souvik Mahapatra, Walter Hansch, Juzer Vasi
Publikováno v:
Microelectronic Engineering. 48:223-226
Copyright Elsevier Publisher
In this study we propose high pressure grown oxide (HIPOX) as an alternative low-temperature MOS gate insulator and show that it performs excellently in comparison to other widely reported low-temperature deposited o
In this study we propose high pressure grown oxide (HIPOX) as an alternative low-temperature MOS gate insulator and show that it performs excellently in comparison to other widely reported low-temperature deposited o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::098dab644b54b30c2b6b244ee1c4dda3
https://doi.org/10.1016/s0167-9317(99)00375-5
https://doi.org/10.1016/s0167-9317(99)00375-5
Publikováno v:
physica status solidi (b). 215:731-736
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::360cd1291a9cb3c434ec188caab5dd48
https://doi.org/10.1002/(sici)1521-3951(199909)215:1<731::aid-pssb731>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199909)215:1<731::aid-pssb731>3.0.co
Autor:
Hans Lüth, S. Wickenhäuser, L. Vescan, Michel Marso, J. Moers, Dirk Klaes, A. Tonnesmann, T. Grabolla, Peter Kordos
Publikováno v:
Solid-State Electronics. 43:529-535
A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor deposition is proposed and the first p-channel device characteristics measured are described. In contrast to other MOS technologies, the gate oxide is dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c855d76213b8abcf260002c752a6920
https://doi.org/10.1016/s0038-1101(98)00301-3
https://doi.org/10.1016/s0038-1101(98)00301-3
Publikováno v:
Thin Solid Films. 336:313-318
The fabrication of a vertical MOSFET is compatible with standard CMOS technology for lateral MOSFETs. Process modules like gate oxidation, polysilicon gate contact, oxide spacer, contact implantation, salizidation, isolation and metallization were us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4872be8b2cf691f15a92b695e18da29c
https://doi.org/10.1016/s0040-6090(98)01285-1
https://doi.org/10.1016/s0040-6090(98)01285-1