Zobrazeno 1 - 10
of 33
pro vyhledávání: '"T. Gonthiez"'
Autor:
Christophe Cachoncinlle, B. Métay, Moulay M. Idrissi, C. Fleurier, O. Sarroukh, R Viladrosa, J. Pons, T. Gonthiez, S.R. Mohanty, Jean-Michel Pouvesle, Eric Robert
Publikováno v:
Plasma Sources Science and Technology. 12:S43-S50
There is an increasing use of high energy photons in many fields of research and in industry. Where large installations such as synchrotrons or dedicated laser based source facilities can provide solutions for specific needs, they are presently unabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f74699585ff9d66bf8feb5bde47b4db
https://doi.org/10.1088/0963-0252/12/4/319
https://doi.org/10.1088/0963-0252/12/4/319
Autor:
Eric Robert, C. Fleurier, A.L. Thomann, T. Gonthiez, Christophe Cachoncinlle, Jean-Michel Pouvesle, Raymond Viladrosa, O. Sarroukh
Publikováno v:
Journal de Physique IV (Proceedings). 108:259-262
Au GREMI, nous etudions le fonctionnement d'une lampe de rayonnement Extreme Ultraviolet (EUV) emettant a 13.5 nm : CAPELLA. Cette lampe consiste en une decharge capillaire dans un flux de xenon continu a basse pression. L'utilisation de Xenon a bass
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd175795058af4958d5d4610544bcbf9
https://doi.org/10.1051/jp4:20030639
https://doi.org/10.1051/jp4:20030639
Autor:
Raymond Viladrosa, Jean-Michel Pouvesle, T. Gonthiez, Christophe Cachoncinlle, Eric Robert, O. Sarroukh, C. Fleurier
Publikováno v:
Journal de Physique IV (Proceedings). 108:169-172
Dans ce travail, nous presentons les caracteristiques de la lampe a decharge capillaire Capella. Cette source de rayonnement EUV peut produire un flux de photon superieur au Watt (2% BW, 13.5 nm) avec un rendement a la prise de courant de plus de 0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b141510674be9de92c1e20add3aee3f
https://doi.org/10.1051/jp4:20030620
https://doi.org/10.1051/jp4:20030620
Autor:
T. Gonthiez, T. Gibert
Publikováno v:
Journal of Applied Physics. 93:5959-5965
Soft ultraviolet laser desorption of neutral and ionized Si atoms was investigated at 355 nm for fluences ranging from the desorption threshold (85 mJ/cm2) up to 165 mJ/cm2. The sensitivity of resonance ionization mass spectrometry enabled the number
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2a56362f7be2a952176053d5b35e6f1
https://doi.org/10.1063/1.1567057
https://doi.org/10.1063/1.1567057
Publikováno v:
Applied Surface Science. 186:111-116
Laser desorption coupled to laser multiphoton-ionisation mass spectrometry is used to study spontaneous or laser induced NH 3 reactivity on silicon surface at room temperature. A 355 nm laser, with a 4.1 ns pulse duration, is focused on a silicon sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb1e7b5b8b11306e6a9a78a2c390241a
https://doi.org/10.1016/s0169-4332(01)00598-0
https://doi.org/10.1016/s0169-4332(01)00598-0
Publikováno v:
Le Journal de Physique IV. 11:Pr7-125
La desorption laser UV (X=355 nm; τ p =7,5 ns) d'une surface de silicium est etudiee dans un domaine de fluence allant de 300 a 700 mJ/cm 2 . Nous realisons l'etude des atomes neutres desorbes en couplant l'ionisation laser resonnante a la spectrome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be9716c4a6549aeb853b824a86c06380
https://doi.org/10.1051/jp4:2001739
https://doi.org/10.1051/jp4:2001739
Autor:
Marie-Claude Castex, T. Gibert, Pascal Brault, Chantal Boulmer-Leborgne, T. Gonthiez, C. Olivero
Publikováno v:
Applied Physics A Materials Science & Processing. 69:S171-S173
We report here first results about single-photon VUV laser photoionization of desorbed species from a silicon surface irradiated by a pulsed and tunable UV laser (290–300 nm). The combination of VUV photoionization at 10 eV with laser-induced surfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::004d88067220eb9bd9c890222713231d
https://doi.org/10.1007/s003399900338
https://doi.org/10.1007/s003399900338
Autor:
Christophe Cachoncinlle, R Viladrosa, Jean-Michel Pouvesle, S.R. Mohanty, Eric Robert, O. Sarroukh, T. Gonthiez, C. Fleurier
Publikováno v:
Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop..
A xenon filled capillary discharge has been developed for efficient EUV radiation production with emphasis on the wavelength range around 13.5 nm in view of application to EUV lithography. This source will be operated in a multi-watt, kHz and low deb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::148f4a58b7c4bb10d577b8a37c1879b7
https://doi.org/10.1109/modsym.2002.1189547
https://doi.org/10.1109/modsym.2002.1189547
Autor:
O. Sarroukh, Christophe Cachoncinlle, T. Gonthiez, Eric Robert, Jean-Michel Pouvesle, A.L. Thomann, Raymond Viladrosa, C. Fleurier
Publikováno v:
IEEE Conference Record - Abstracts. 2002 IEEE International Conference on Plasma Science (Cat. No.02CH37340).
Summary form only given, as follows. We have developed xenon discharge plasma sources dedicated to EUV lithography and to EUV metrology. Few kA currents with fast rise time and short duration have been applied across xenon filled ceramics capillary (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7220ce59c96d64cc676a543bb307d863
https://doi.org/10.1109/plasma.2002.1030356
https://doi.org/10.1109/plasma.2002.1030356
Autor:
Ouassima Sarroukh, T. Gonthiez, Christophe Cachoncille, Raymond Viladrosa, C. Fleurier, Eric Robert, Moulay M. Idrissi, Jean-Michel Pouvesle
Publikováno v:
SPIE Proceedings.
In this paper, an EUV lamp development based on high repetition rate compact capillary discharge devices is presented. The first lamp, named CAPELLA (Capillary EUV Lamp for Lithography Approach) emits up to 1 W in-band and has been selected as the il
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61fe1af0cd7407b9ca80b095cd7e844
https://doi.org/10.1117/12.482330
https://doi.org/10.1117/12.482330